DiodesZetex N-Channel Enhancement Mode MOSFET 4 A 30 V 3-Pin SOT-23 DMG3402LQ-7

DiodesZetex DMG3402LQ-7 is a high-efficiency N-Channel enhancement mode MOSFET designed for applications requiring low on-state resistance and superior switching performance. It supports a maximum continuous drain current of 4 A and a maximum drain-source voltage of 30 V, making it suitable for various electronic and power management systems.

This MOSFET features a low forward voltage of 1.16 V and a typical gate charge of 11.7 nC at gate-source voltage, enabling fast switching and energy-efficient operation. It comes in a compact 3-pin SOT-23 surface mount package, ideal for dense PCB layouts.

The device maintains reliable operation across a broad temperature range (-55°C to 150°C) and dissipates up to 1.4 W of power. Conforming to the automotive standard AEC-Q101, it is suitable for automotive and industrial environments demanding robust performance.

Key physical dimensions include a length of 2.3 mm, width of 2.8 mm, and height of 900 μm. The MOSFET’s package design and electrical characteristics make it a preferred choice for power management, embedded systems, and general semiconductor applications.

Designed for efficient power management with low on-state resistance. Comes in a 3-pin SOT-23 surface mount package. Features fast switching speed and low input capacitance. Maximum power dissipation of 1.4 W for reliable thermal performance.

Operates within a temperature range from -55°C to 150°C. Typical gate charge of 11.7 nC at Vgs for optimized switching. Complies with automotive standard AEC-Q101 for enhanced reliability. Compact dimensions ensure suitability for dense PCB layouts.

Manufactured in China ensuring industrial-grade quality and consistency.

This MOSFET is extensively used in industrial, automotive, HVAC, electronic components manufacturing, and power management systems. For a comprehensive selection of MOSFETs and semiconductor devices, explore EnvMart’s extensive catalog.