Vishay N-Channel MOSFET, 29 A, 600 V Enhancement Mode, TO-247 Package SIHG105N60EF-GE3

Vishay SIHG105N60EF-GE3 N-Channel MOSFET is a power semiconductor device designed for high-efficiency and high-reliability applications in industrial electronics and power management systems. It features a 29 ampere maximum continuous drain current and a 600 volt maximum drain-source voltage, making it suitable for high voltage switching and amplification tasks.

The MOSFET is constructed with a 4th generation E series technology, which reduces switching and conduction losses, enhancing overall system efficiency. It is mounted in a TO-247 package with through-hole mounting for stable mechanical and electrical connections.

This enhancement mode MOSFET has a low drain-source resistance of 102 milliohms, which minimizes conduction losses and improves heat dissipation. The typical gate charge of 53 nanocoulombs allows for fast switching speeds, beneficial in power conversion and motor control circuits.

The device supports operation over a broad temperature range from -55°C up to 150°C, making it suitable for harsh industrial environments. Its maximum power dissipation capability is 208 watts, which allows it to handle substantial power loads without overheating.

The MOSFET is ideal for applications in power supplies, motor drives, and industrial control systems requiring robust and efficient switching components. Typical uses include commercial electronics, manufacturing controls, and other high-power electronic systems.

Supports continuous drain current up to 29 amperes for demanding applications. High maximum drain-source voltage of 600 volts ensures robust operation. Low drain-source resistance of 102 milliohms minimizes power loss. Designed with enhancement mode channel for efficient switching performance.

Maximum power dissipation rating of 208 watts for high thermal capability. Standard TO-247 package type with through-hole mount design facilitates integration. Typical gate charge of 53 nanocoulombs provides fast switching capability.

Operates reliably over a wide temperature range from -55°C to 150°C. Maximum gate-source voltage rating of 30 volts ensures gate protection. Compact device dimensions include 20.7 mm height, 15.87 mm length, and 5.21 mm width.

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