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Vishay N-Channel MOSFET Power Transistor 29 A 600 V Enhancement Mode 3-Pin TO-263 SIHB105N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 15.88mm |
| Length | 10.67mm |
| Model | SIHB105N60EF-GE3 |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | SiHB105N60EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 102mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a maximum continuous drain current of 29 A.
- It supports a maximum drain-source voltage of 600 V for robust operation.
- The device comes with a surface mount TO-263 package with 3 pins for effective thermal management.
- Maximum power dissipation of 208 W supports high power handling.
- Operating temperature range spans from -55°C to 150°C allowing versatile use cases.
- A low typical gate charge of 53 nC ensures efficient switching performance.
- Forward voltage drop is approximately 1.2 V enhancing conduction efficiency.
- The MOSFET operates in enhancement mode suitable for switching applications.
Product Description
Vishay SIHB105N60EF-GE3 is a high-performance N-Channel MOSFET designed for power electronic applications requiring enhanced switching efficiency and reliability. This power transistor supports a maximum continuous drain current of 29 A and a drain-source voltage rating of 600 V, making it suitable for a range of industrial, automotive, and commercial electronics.
The MOSFET employs 4th generation E series technology which significantly reduces switching and conduction losses, optimizing overall device efficiency. Packaged in a compact 3-pin TO-263 surface mount package, it balances thermal dissipation capabilities with PCB space savings.
Key electrical characteristics include a maximum power dissipation of 208 W, a low forward voltage drop of 1.2 V, and a typical gate charge of 53 nC at 5 V which allows faster switching frequencies while minimizing power losses. The device voltage ratings, including 30 V maximum gate-source voltage and environmental operating temperatures from -55°C to 150°C, enable reliable operation in harsh industrial conditions.
This MOSFET enhances circuit design flexibility given its robust performance metrics and durable surface mount form factor. It is widely used in power management circuits, motor drives, and switching regulators within automotive and industrial equipment.
Maximum continuous drain current: 29 A. Drain-source voltage: 600 V. Package type: TO-263 3-pin surface mount. Operating temperature from -55°C to 150°C. Power dissipation up to 208 W. Low forward voltage drop of 1.2 V. Gate charge typical 53 nC.
Enhancement mode channel operation. Compact device dimensions: 15.88 mm height, 10.67 mm length, 4.83 mm width.
Ideal for industrial, power electronics, automotive, and commercial applications, this Vishay MOSFET combines reliability with high efficiency. Browse EnvMart's MOSFET category for more power semiconductor solutions and complementary electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 A.
This MOSFET supports a maximum drain-source voltage of 600 V.
It comes in a TO-263 3-pin surface mount package.
The operating temperature range spans from -55°C to 150°C.
The maximum power dissipation is 208 W.
The typical gate charge is 53 nC at 5 V.
The forward voltage drop is approximately 1.2 V.
It uses an enhancement mode N-channel configuration.
The dimensions are 15.88 mm in height, 10.67 mm in length, and 4.83 mm in width.
The maximum gate-source voltage is 30 V.
The maximum drain-source resistance is 102 mΩ.
It is commonly used in power management circuits, motor drives, and switching regulators within automotive and industrial equipment.
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