Vishay N-Channel MOSFET 7.7 A 60 V Enhancement 3-Pin IPAK Through Hole IRLU014PBF

Vishay IRLU014PBF is a high-performance N-Channel Enhancement Mode MOSFET designed for electronic and power management applications requiring efficient switching and amplification. It supports a maximum continuous drain current of 7.7 A and can withstand drain-source voltages up to 60 V, ensuring robust operation under demanding conditions.

This device is housed in a 3-pin IPAK through-hole package, which simplifies mounting and integration on printed circuit boards. The low maximum drain-source resistance of 200 mΩ reduces conduction losses, enhancing overall efficiency in power circuits. With a typical gate charge of 8.4 nC, it offers fast switching speed, critical for switching power supplies and motor control.

The MOSFET operates reliably within a wide ambient temperature range from -55°C to 150°C, supporting diverse industrial and commercial environments. Its maximum power dissipation is specified at 2.5 W, contributing to thermal stability during use.

Compact physical dimensions (length: 6.73 mm, height: 6.22 mm, width: 2.39 mm) make this MOSFET ideal for space-constrained layouts. The device’s gate-source voltage rating of -10 V to +10 V enables compatibility with a variety of control voltages in DC-DC converters, power amplifiers, and load switches.

Applications for the Vishay IRLU014PBF N-Channel MOSFET include power management in industrial controls, automotive electronics, telecommunications, and consumer electronics where efficient switching and durability are required.

Supports a maximum continuous drain current of 7.7 A ensuring efficient power handling. Features a drain-source voltage rating of 60 V suitable for a variety of switching applications. Constructed in a 3-pin IPAK through-hole package facilitating easy PCB mounting.

Exhibits low maximum drain-source resistance of 200 mΩ for improved conductivity. Operates within a temperature range of -55°C to 150°C ensuring durability across environments. Typical gate charge at Vgs is 8.4 nC enabling fast switching performance.

Maximum power dissipation is rated at 2.5 W providing reliable power handling capacity. Designed for enhancement mode channel operation with a maximum gate-source voltage of -10 V to +10 V. Compact dimensions optimize board space.

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