Vishay N-Channel MOSFET 5.6 A 100 V Enhancement 3-Pin TO-220 IRL510PBF

Vishay IRL510PBF is a high-performance N-Channel MOSFET transistor designed for power and switching applications. This device supports a maximum continuous drain current of 5.6 A and a drain-source voltage rating of 100 V. Packaged in a 3-Pin TO-220 through hole mount, it facilitates ease of installation in various electronic circuits.

The enhancement mode channel enables efficient switching and low conduction losses, making it ideal for power management tasks. Its maximum drain-source resistance of 540 milliohms supports effective current flow with minimal voltage drop and power dissipation. Operating temperatures range from a minimum of -55°C to a maximum of 175°C, allowing usage in demanding industrial or automotive conditions.

The gate charge of 6.1 nC at Vgs promotes rapid switching speeds, supporting high-frequency applications. The device can tolerate gate-source voltages from -10 to +10 volts, facilitating compatibility with standard gate drive voltages. With a maximum power dissipation of 3.7 watts, the MOSFET is suitable for applications involving moderate power handling.

Its physical dimensions - height 9.01 mm, length 10.41 mm, and width 4.7 mm - allow for compact circuit design. The TO-220 package is widely used in power electronics for robust mechanical and thermal performance. This MOSFET is not certified to any automotive standards but is designed for general purpose semiconductor uses.

Designed for through hole mounting providing reliable installation. Utilizes an enhancement mode channel for efficient switching. Maximum drain-source resistance of 540 milliohms ensures low power loss. Operates over a wide temperature range from -55°C to 175°C.

Typical gate charge at Vgs is 6.1 nanocoulombs for fast switching. Maximum power dissipation rated at 3.7 watts for robust performance. Voltage gate-source tolerance is ±10 volts, suitable for standard gate driving. Compact dimensions with height 9.01 mm, length 10.41 mm, and width 4.7 mm.

This Vishay N-Channel MOSFET IRL510PBF is suitable for industrial, power management, electronics manufacturing, and laboratory testing applications where efficient switching and reliable operation are required. It is a durable semiconductor component designed to improve system efficiency and performance.

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