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DiodesZetex DMP Type P-Channel MOSFET, 4.5 A, 60 V Enhancement Mode, 8-Pin SOIC Package DMP6110SSS-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMP6110SSS-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 19.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement mode P-Channel MOSFET with 4.5 A maximum continuous drain current.
- Supports maximum drain-source voltage of 60 V in an 8-pin SOIC package.
- Low drain-source resistance of 130 milliohms improves conduction efficiency.
- Maximum power dissipation rated at 2 W with operating temperature up to 150°C.
- AEC-Q101 automotive standard certified for high reliability.
- Typical gate charge of 19.4 nC allows efficient switching control.
- Surface mount design enables compact PCB layouts and easy integration.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
Product Description
DiodesZetex DMP6110SSS-13 is a P-Channel MOSFET designed for discrete semiconductor applications requiring efficient power management within electronics, automotive, and industrial domains.
This device supports a maximum continuous drain current of 4.5 A and a maximum drain-source voltage of 60 V, making it suitable for medium power switching tasks. Its SOIC package with 8 pins facilitates surface mounting on compact printed circuit boards, delivering space economy while maintaining performance.
The enhancement channel mode MOSFET features a low maximum drain-source resistance of 130 mΩ which helps reduce conduction losses and improve efficiency.
It can dissipate up to 2 W of power and withstands a broad temperature range from -55°C to 150°C to ensure reliable operation under automotive grade conditions as evidenced by the AEC-Q101 compliance.
The typical gate charge of 19.4 nC at specified gate voltages enables controlled switching speeds, balancing power efficiency and response time.
This transistor is ideal for use in power supply circuits, load switching, and signal amplification in industries including automotive electronics, industrial control systems, and other commercial electronic devices.
This MOSFET supports surface mounting for modern assembly technology. Low forward voltage at -1.2 V reduces power loss in operation. Wide operating temperature range suitable for extreme environment applications. Compliance with automotive standards ensures robustness and reliability.
Compact 4.95 mm length and 3.95 mm width package ensures space-efficient design integration.
For professionals requiring high-quality MOSFETs with proven performance differential and reliability, the DiodesZetex DMP6110SSS-13 is a trusted choice in semiconductor components.
Explore more MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart for a comprehensive selection tailored to your technical needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
It supports a maximum drain-source voltage of 60 V.
This model comes in an 8-pin SOIC package type.
The typical gate charge is 19.4 nC at specified gate voltages.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation is rated at 2 W.
It has a maximum drain-source resistance of 130 mΩ.
This model is AEC-Q101 certified for automotive applications.
The forward voltage is -1.2 V.
The dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
It supports surface mounting for compact PCB layouts.
This model features a P-Channel type.
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