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Infineon HEXFET Type P-Channel MOSFET 40 A 100 V Enhancement Mode 3-Pin TO-220 IRF5210PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF5210PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- The device operates in enhancement mode for precise control.
- 3-pin TO-220 package ensures easy through-hole mounting.
- Low on-resistance of 60mΩ reduces power losses and improves thermal handling.
- Maximum power dissipation is 200W, supporting robust operation.
- Wide operating temperature range from -55°C to +175°C allows use in harsh environments.
- Capable of handling high gate voltage up to ±20 V.
- Suitable for automotive and industrial applications requiring reliable power switching.
- Compact dimensions of 10.54 mm length, 8.77 mm height, and 4.69 mm width.
Product Description
Infineon IRF5210PBF is a HEXFET Type P-Channel MOSFET specially engineered to handle high current of 40 A with a maximum drain-source voltage of 100 V. It employs enhancement mode operation to enable efficient power management in electronic circuits.
The component is housed in a durable 3-pin TO-220 package optimized for through-hole mounting, facilitating ease of installation in industrial and automotive PCBs.
Featuring a low on-resistance of 60 milliohms, this MOSFET minimizes conduction losses, enhancing energy efficiency and thermal performance. The robust design supports a maximum power dissipation of 200 watts, allowing it to operate reliably under heavy load conditions.
Operating temperature range extends from -55°C to +175°C, making the IRF5210PBF suitable for harsh and high-temperature environments commonly encountered in industrial automation, motor controls, and power switching applications.
The device supports a broad gate-source voltage range of -20 to +20 volts, providing flexibility in various circuit topologies. Its compact size supports dense circuit designs without compromising performance.
The device operates in enhancement mode for precise control. 3-pin TO-220 package ensures easy through-hole mounting. Low on-resistance reduces power losses and enhances thermal efficiency. Supports high power dissipation up to 200 watts.
Wide operating temperature range for industrial and automotive use. Handles gate voltages from -20 V to +20 V. Compact dimensions ease PCB layout constraints. Reliable for power switching and motor control applications.
This MOSFET is ideal for use in industrial automation systems, DC-DC converters, motor controls, and other electronics requiring efficient, high-current P-channel switches. Its performance characteristics ensure long-term reliability in demanding electrical environments.
Explore more semiconductor products suitable for diverse industrial and automotive applications in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
It can handle a maximum drain-source voltage of 100 V.
The on-resistance of this MOSFET is 60 milliohms (60 mΩ).
It supports a maximum power dissipation of 200 W.
The operating temperature range extends from -55°C to +175°C.
This model uses a 3-pin TO-220 package designed for through-hole mounting.
It can handle gate-source voltages ranging from -20 V to +20 V.
The typical gate charge at Vgs is 180 nC.
It is suitable for use in industrial automation systems, DC-DC converters, and motor controls.
The dimensions are 10.54 mm in length, 8.77 mm in height, and 4.69 mm in width.
This model features a P-channel type.
The country of origin for this MOSFET is China.
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