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Infineon HEXFET Type P-Channel MOSFET 55 V 31 A 110 W TO-220 IRF5305PBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF5305PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
| IRF5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- This P-channel enhancement mode MOSFET is designed for high efficiency power switching.
- It supports a continuous drain current of 31 amperes for demanding applications.
- The device features a low on-resistance of 60 milliohms to minimize power loss.
- The TO-220AB package provides effective thermal dissipation and easy mounting.
- Operating temperature range extends from -55°C to +175°C for harsh environments.
- Maximum power dissipation is rated at 110 watts for reliable performance.
- Gate-source voltage tolerance ranges from -20 V to +20 V, allowing versatile control.
- Typical gate charge of 63 nanocoulombs enables fast switching speeds.
Product Description
Infineon IRF5305PBF HEXFET Type P-Channel MOSFET is engineered for high efficiency switching applications requiring a 31 A continuous drain current and 55 V maximum drain source voltage. Housed in a TO-220AB package, it offers excellent thermal performance with a maximum power dissipation of 110 W.
This enhancement mode P-channel MOSFET features a low drain-source resistance of 60 milliohms, minimizing conduction losses and improving overall device efficiency. It operates over a wide temperature range from -55°C to +175°C, suitable for industrial, automotive, and renewable energy systems.
The device supports a maximum gate-source voltage of ±20 V, accommodating various control voltages, and provides a typical gate charge of 63 nC which enables rapid switching applications. The forward voltage is rated at -1.3 V facilitating effective conduction characteristics.
Designed with a 3-pin TO-220 through-hole package, it is compatible with automated assembly systems and ensures easy integration into motor control, power supply circuits, and electronic switching devices.
High continuous drain current of 31 A supports demanding industrial power circuits. Low Rds(on) of 60 mΩ optimizes efficiency and reduces heat generation. Wide operating temperature range allows deployment in extreme environments.
Reliable switching enabled by typical gate charge of 63 nC. Robust TO-220AB package for excellent thermal management. Suitable for motor control, power supplies, and renewable energy applications. Compatible with automated-through hole mounting and PCB assemblies.
This Infineon MOSFET is designed for electronic components applications including industrial automation, power management, and renewable energy systems. Its robust specifications ensure longevity and performance in tough conditions.
Explore our extensive range of MOSFETs and semiconductor devices at EnvMart tailored for industrial and commercial electrical needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31 amperes.
This P-channel MOSFET supports a maximum drain-source voltage of 55 volts.
The maximum power dissipation for this MOSFET is rated at 110 watts.
It features a low on-resistance of 60 milliohms, which helps minimize power loss.
The operating temperature range extends from -55°C to +175°C, making it suitable for harsh environments.
The typical gate charge is 63 nanocoulombs, enabling fast switching speeds.
This device is housed in a TO-220AB package, which provides effective thermal dissipation and easy mounting.
The gate-source voltage tolerance ranges from -20 V to +20 V, allowing for versatile control.
This model has a pin count of 3, suitable for through-hole mounting.
It is suitable for applications in motor control, power supplies, and renewable energy systems.
The forward voltage is rated at -1.3 V, facilitating effective conduction characteristics.
This MOSFET is a Type P channel, designed for enhancement mode operation.
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