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Toshiba TK N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-220 TK40A06N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK40A06N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 10.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed for high-efficiency power switching and amplification applications.
- Features enhancement mode operation for reliable performance.
- Low drain-source resistance of 10.4 milliohms minimizes conduction losses.
- Supports maximum power dissipation up to 30 watts for thermal robustness.
- Through-hole mount type with 3-pin configuration for easy PCB integration.
- Maximum operating temperature rated at 150°C for high-temperature endurance.
- Compact dimensions of 10mm length, 15mm height, and 4.5mm width optimize circuit space.
- Typical gate charge of 23nC at gate-source voltage of 23V ensures fast switching.
Product Description
Toshiba TK40A06N1,S4X(S is a high-performance N-Channel MOSFET transistor designed for electronic and power management applications.
This device supports a maximum continuous drain current of 60 amperes and operates with a maximum drain-source voltage of 60 volts, offering robustness for demanding switching environments.
Encapsulated in a TO-220 package, the MOSFET features through-hole mounting with a 3-pin configuration, providing ease of installation on printed circuit boards. The enhancement mode channel type ensures efficient switching performance with a low drain-source resistance of 10.4 milliohms, minimizing power loss during conduction.
With a maximum power dissipation of 30 watts and an operating temperature limit of 150°C, this MOSFET is suitable for use in industrial, commercial, and automotive electronic equipment requiring reliable heat tolerance.
High continuous drain current of 60 A enables high-power applications. Low Rds(on) value reduces energy wastage. Robust voltage ratings protect against voltage spikes. Compact TO-220 package optimizes PCB real estate. Wide gate voltage range supports flexible driver circuits.
This MOSFET is ideal for applications including power supplies, motor controls, DC-DC converters, and other electronic circuits requiring fast, efficient switching. Country of origin: China. Explore more Toshiba MOSFET transistors and discrete semiconductor products at EnvMart for your industrial component needs.
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Frequently Asked Questions
The Toshiba TK40A06N1,S4X(S supports a maximum continuous drain current of 60 amperes.
It operates with a maximum drain-source voltage of 60 volts.
The low drain-source resistance is 10.4 milliohms, which helps minimize conduction losses.
This model can dissipate a maximum power of 30 watts, ensuring thermal robustness.
The typical gate charge at a gate-source voltage of 23V is 23nC.
The dimensions of the TO-220 package are 10mm in length, 15mm in height, and 4.5mm in width.
It is rated for a maximum operating temperature of 150°C.
This model features a through-hole mounting type with a 3-pin configuration, facilitating easy PCB integration.
It is suitable for applications including power supplies, motor controls, and DC-DC converters.
The channel type is enhancement mode N-channel, which ensures efficient switching performance.
The maximum gate-source voltage supported is -20V to +20V.
The forward voltage is -1.2V.
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