Toshiba TPC Type P-Channel MOSFET, 40 A, 40 V Enhancement Mode, 8-Pin SOP Package TPCA8108(TE12L,Q)

Toshiba TPCA8108(TE12L,Q) is a P-Channel enhancement-mode MOSFET designed for applications requiring high current and voltage capabilities. It supports a maximum continuous drain current of 40 A and can withstand drain-source voltages up to 40 V. The transistor is housed in a Surface-mount SOP package comprising 8 pins, which facilitates space-saving PCB layouts and ease of mounting.

This MOSFET features a low maximum drain-source resistance of 9.5 milliohms, enabling efficient conduction with minimal power loss. It also supports a maximum power dissipation of 45 W, allowing it to handle significant thermal loads during operation.

The device operates across a wide temperature range, from as low as -55°C up to a maximum of 150°C, making it suitable for industrial, automotive, and high-performance electronic system environments. Typical gate charge is 100 nC at Vgs, ensuring effective switching performance with controlled gate drive characteristics.

The maximum gate-source voltage of ±20 V safeguards the device against gate oxide breakdown, enhancing longevity and reliability. The compact dimensions - 5 mm length, 5 mm width, and 950 micrometers height - make it ideal for designs with limited space.

Maximum continuous drain current of 40 A. Drain-source voltage rating of 40 V. Surface-mount SOP package with 8 pins. Maximum power dissipation of 45 W. Operating temperature range from -55°C to 150°C. Low on-resistance of 9.5 mΩ for efficient conduction.

Typical gate charge of 100 nC at Vgs. Maximum gate-source voltage ±20 V. Compact dimensions enable dense PCB layouts. Manufactured in Japan to high quality standards.

This product is widely used in semiconductor applications within electronics manufacturing, power regulation circuits, automotive electronics, and industrial controls. Toshiba's TPC Series MOSFETs provide reliable performance in demanding conditions.

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