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Toshiba TK N-Channel Enhancement Mode MOSFET 31A 600V TO-220 3-Pin TK31E60W,S1VX(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK31E60W,S1VX(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 88mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 86nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 31 amperes ensures high current handling capacity.
- 600V maximum drain-source voltage rating for robust voltage tolerance.
- Enhancement mode channel type delivers efficient operation.
- TO-220 package provides easy mounting and heat dissipation.
- Supports a maximum power dissipation of 230 watts for heavy-duty use.
- Typical gate charge of 86 nanocoulombs at 10 V gate voltage enables fast switching.
- Wide operating temperature range from -55°C to 150°C ensures versatility.
- Low maximum drain-source resistance of 88 milliohms reduces power loss.
Product Description
The Toshiba TK31E60W,S1VX(S is a robust N-Channel enhancement mode MOSFET designed for high current and voltage applications. Operating at a maximum continuous drain current of 31A and a drain-source voltage of 600V, this device supports demanding power switching requirements reliably.
Packaged in a durable TO-220 format with three pins, it ensures ease of installation and efficient heat dissipation, making it ideal for industrial and commercial electronics use.
Its low drain-source resistance of 88 milliohms minimizes conduction losses, supporting efficient energy management in circuits. With a maximum power dissipation rating of 230 watts, it is suitable for high power applications.
Designed for a wide range of operating conditions, the TK31E60W,S1VX(S performs consistently between -55°C and 150°C, ensuring reliability in various environments.
The enhancement mode channel ensures effective switching performance, with a typical gate charge of 86 nanocoulombs that allows rapid switching transitions. The maximum gate-source voltage is rated at -30V to +30V, providing operational safety margins.
Maximum continuous drain current: 31A. Maximum drain-source voltage: 600V. TO-220 package with 3 pins facilitates mounting. Maximum power dissipation: 230W. Operating temperature: -55°C to 150°C. Low drain-source resistance: 88mΩ.
Typical gate charge: 86nC at Vgs 10V. Enhancement mode operation.
This MOSFET is widely applicable in industrial electronics, power conversion, and control equipment factories requiring durable and efficient switching components. Its reliable performance makes it suitable for use in power management, inverter circuits, and motor drives.
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Frequently Asked Questions
The maximum continuous drain current of this model is 31 amperes.
It has a maximum drain-source voltage rating of 600 volts.
This unit comes in a TO-220 package type, which facilitates easy mounting and heat dissipation.
The maximum power dissipation is rated at 230 watts, suitable for heavy-duty applications.
The typical gate charge at a 10V gate voltage is 86 nanocoulombs.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 88 milliohms, which helps reduce power loss.
The TO-220 package features 3 pins.
It utilizes an N-channel enhancement mode for efficient operation.
The maximum gate-source voltage is rated at -30V to +30V.
This MOSFET is suitable for industrial electronics, power conversion, and control equipment.
The dimensions are 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width.
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