Vishay N-Channel Power MOSFET 20 A 30 V Enhancement Mode 8-Pin PowerPAK 1212 SiSHA14DN-T1-GE3

Vishay SiSHA14DN-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power applications with a continuous drain current of 20 A at 30 V and an enhancement mode channel. It is housed in a compact 8-pin PowerPAK 1212 surface mount package, measuring 3.3 mm in length and width and 930 μm in height, making it ideal for space-constrained electronic assemblies.

This MOSFET features a low maximum drain-source resistance (Rds) of 8 mΩ, reducing conduction losses and improving efficiency in power management circuits. It has a typical gate charge of 19.4 nC at Vgs, facilitating fast switching speeds required in modern electronics.

The device operates reliably from -55°C to 150°C, ensuring robust performance under extreme environmental conditions. Its maximum power dissipation is rated at 26.5 W. The maximum gate-source voltage rating of -16 to +20 V enables flexible gate drive options for device protection and performance tuning.

With a forward voltage drop of 1.1 V, the MOSFET limits power losses and enhances overall energy efficiency. The surface mount design supports high-volume manufacturing and automated PCB assembly processes.

Applications include use in industrial power supplies, automotive electronic systems, and discrete semiconductor modules. The device meets standard semiconductor quality without automotive-specific certification but is built for durability and consistent performance.

This MOSFET provides low Rds and high power handling for efficient switching. Compact PowerPAK 1212 packaging enables space-saving PCB layouts. Wide operating temperature range supports harsh environments. High gate voltage tolerance ensures reliable gate control.

Optimized for automotive, industrial, and power supply applications. Explore more Vishay Power MOSFETs and power management components on EnvMart for your electronic and industrial design needs.