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Vishay SiSS61DN Type P-Channel MOSFET 111.9A 20V Enhancement Mode 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 780μm |
| Length | 3.3mm |
| Model | SiSS61DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SiSS61DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 111.9A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 9.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 65.8W |
| Typical Gate Charge Qg @ Vgs | 154nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET utilizes TrenchFET® Gen III technology for high performance.
- Features a low typical drain-source resistance (Rds(on)) of 9.8 milliohms.
- Supports a maximum power dissipation of 65.8 watts for robust operation.
- Operates efficiently within temperatures ranging from -55°C to 150°C.
- Compact 3.3mm x 3.3mm footprint with 780μm height enhances thermal management.
- Enhancement mode device with a maximum gate-source voltage of 8 volts.
- Designed for surface mount applications with 8-pin configuration.
- Forward voltage of -1.2 volts useful in circuit design considerations.
Product Description
Vishay SiSS61DN-T1-GE3 is a high-performance Type P-Channel MOSFET designed for power management in electronic circuits. Rated with a maximum continuous drain current of 111.9 amperes and a maximum drain-source voltage of 20 volts, this enhancement mode transistor utilizes TrenchFET® Gen III technology to deliver superior efficiency and low losses.
The device comes in a thermally enhanced 8-pin PowerPAK 1212 surface mount package, measuring 3.3 millimeters in length and width, with a height of 780 micrometers. Its low Rds(on) value of 9.8 milliohms ensures minimal conduction losses, while supporting a maximum power dissipation of 65.8 watts, allowing reliable performance even under heavy load.
Operating temperature ranges from -55°C to 150°C, making it suitable for a wide variety of industrial, electronic, and power supply applications. The device’s maximum gate-source voltage is 8 volts, with a typical gate charge of 154 nanocoulombs at Vgs, facilitating swift switching characteristics.
Its forward voltage of -1.2 volts is an important parameter in power circuit design, and the 8-pin configuration allows for compact PCB layouts optimized for surface mounting. This MOSFET is ideal for applications in industrial power controls, motor drivers, power converters, and other electronic components requiring efficient power switching.
The MOSFET utilizes TrenchFET® Gen III technology for high performance. Features a low typical drain-source resistance (Rds(on)) of 9.8 milliohms. Supports a maximum power dissipation of 65.8 watts for robust operation. Operates efficiently within temperatures ranging from -55°C to 150°C.
Compact 3.3mm x 3.3mm footprint with 780μm height enhances thermal management. Enhancement mode device with a maximum gate-source voltage of 8 volts. Designed for surface mount applications with 8-pin configuration. Forward voltage of -1.2 volts useful in circuit design considerations.
This component is widely used in electronic manufacturing, power conversion, industrial control, and automotive electronics that do not require automotive certification, where reliable high current switching and thermal performance are critical.
Explore the wide range of semiconductor and MOSFET components available at EnvMart for your industrial and electronic design projects.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SiSS61DN is 111.9 amperes.
This model has a maximum drain-source voltage of 20 volts.
The typical drain-source resistance for this MOSFET is 9.8 milliohms.
It supports a maximum power dissipation of 65.8 watts.
The operating temperature range is from -55°C to 150°C.
The footprint size of the PowerPAK 1212 package is 3.3mm x 3.3mm with a height of 780 micrometers.
The maximum gate-source voltage is 8 volts.
The typical gate charge at Vgs is 154 nanocoulombs.
It is designed for surface mount applications.
This unit is a Type P-Channel MOSFET.
The forward voltage is -1.2 volts, which is useful for circuit design considerations.
The MOSFET is manufactured in India.
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