DiodesZetex N-Channel MOSFET, 8 A Drain Current, 30 V Drain Source Voltage, 8-Pin SOIC Package DMN4800LSSL-13

DiodesZetex DMN4800LSSL-13 is a high-performance N-Channel MOSFET designed for surface mount technology applications, offering a maximum continuous drain current of 8 amperes and a maximum drain-source voltage of 30 volts. It operates in enhancement mode with a low drain-source resistance of 20 milliohms, enabling efficient power switching in electronic circuits.

The device comes housed in an 8-pin SOIC package that allows compact and reliable PCB mounting. Its power dissipation capability of 1.46 watts supports use in medium-power applications. It is suitable for automotive and industrial electronics due to its compliance with industry standards AEC-Q200, AEC-Q100, and AEC-Q101.

Operating temperature ranges from a low of -55 degrees Celsius up to 150 degrees Celsius, ensuring reliable performance under harsh thermal conditions. The MOSFET exhibits a typical gate charge of 8.7 nano-Coulombs at the gate-source voltage threshold, enabling fast and efficient switching. The gate-source voltage tolerance of +/-20 volts provides robustness against transient voltages.

Its forward voltage drop of 0.94 volts contributes to efficient conduction. The device's compact size with a length of 4.95 millimeters, width of 3.95 millimeters, and height of 1.5 millimeters supports high-density circuits, making it suitable for automotive, industrial control, power management, and electronic manufacturing applications.

This MOSFET features an 8-pin SOIC package allowing surface mount assembly. Low drain-source resistance (20 milliohms) enables reduced conduction losses. Enhancement channel mode operation suitable for various switching designs.

Operating temperature range from -55°C to +150°C ensures reliability. Automotive grade standard certifications confirm quality and endurance. Typical gate charge of 8.7 nC at Vgs supports fast switching performance. Gate-source voltage tolerance of ±20 V ensures protection from voltage spikes.

Forward voltage of 0.94 V reduces power dissipation during conduction. Compact dimensions facilitate integration in space-constrained electronics.

Ideal for applications in industrial electronics, automotive systems, power management circuits, and discrete semiconductor device assemblies. This MOSFET supports enhancement mode switching requirements and balances low on-resistance with compact package design.

Explore a broad range of MOSFETs in EnvMart’s semiconductor section for diverse high-quality electronic component needs.