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Vishay P-Channel MOSFET, Type SiSH101DN-T1-GE3, 30 V, 35 A, 52 W PowerPAK 1212, 8-Pin Surface Mount
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 930μm |
| Length | 3.3mm |
| Model | SiSH101DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SiSH101DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 68nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports a maximum continuous drain current of 35 A.
- Maximum drain-source voltage of 30 V for moderate voltage applications.
- Equipped with an 8-pin PowerPAK 1212 surface-mount package.
- Delivers a maximum power dissipation of 52 W under load.
- Operating temperature range from -55°C to 150°C for harsh environments.
- Low drain-source resistance of 13 milliohms for energy efficiency.
- Typical gate charge of 68 nC at standard gate voltage.
- Maximum gate-source voltage rated at 25 V for gate protection.
Product Description
Vishay SiSH101DN-T1-GE3 is a P-Channel enhancement mode MOSFET engineered for high efficiency and surface mount applications in power switching circuits. This semiconductor device is housed in an 8-pin PowerPAK 1212 package, optimizing footprint and thermal management in electronic assemblies.
The MOSFET is rated with a maximum continuous drain current of 35 amperes and a drain-source voltage of 30 volts, making it suitable for medium power electronic modules requiring efficient power control. It has a low drain-source resistance of 13 milliohms which reduces conduction losses and improves energy efficiency.
This device supports a maximum power dissipation of 52 watts, allowing it to operate reliably under high load conditions. The operating temperature range from -55°C to 150°C enables dependable performance in a wide variety of industrial, automotive, and consumer electronic environments.
Its typical gate charge of 68 nanocoulombs at standard gate voltage ensures fast switching capabilities for high-speed electronic control designs. The maximum gate-source voltage is 25 volts which safeguards gate operation during transient conditions.
The advanced trenchFET® technology incorporated in Vishay's SiSH101DN-T1-GE3 improves switching speed and enhances conduction efficiency compared to traditional MOSFET designs. This MOSFET is ideal for use in industrial power management systems, automotive electronics, telecommunications, and other semiconductor discrete applications.
The surface mount configuration facilitates automated PCB assembly and compact electronic design. Discover a wide range of semiconductor devices including MOSFETs at EnvMart for your next design or manufacturing project.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SiSH101DN-T1-GE3 is 35 A.
This model supports a maximum drain-source voltage of 30 V.
It has a maximum power dissipation of 52 W under load conditions.
The operating temperature range for this unit is from -55°C to 150°C.
The drain-source resistance is rated at 13 milliohms, which enhances energy efficiency.
It is housed in an 8-pin PowerPAK 1212 surface-mount package.
The typical gate charge at standard gate voltage is 68 nC.
The maximum gate-source voltage is rated at 25 V.
The dimensions are 3.3 mm in length and width, with a height of 930 μm.
This device is a P-Channel enhancement mode MOSFET.
It is suitable for industrial power management systems, automotive electronics, and telecommunications.
The Vishay SiSH101DN-T1-GE3 is manufactured in India.
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