DiodesZetex N-Channel IGBT 50 A 1200 V 3-Pin TO-247 Through Hole DGTD120T25S1PT

DiodesZetex DGTD120T25S1PT is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) engineered for industrial and power electronics applications. With a maximum continuous collector current of 50 A and a collector emitter voltage rating of 1200 V, this IGBT delivers efficient high-speed switching with a low collector emitter saturation voltage of 2.4 V.

Manufactured using advanced Field Stop Trench IGBT technology, the device ensures superior quality, minimized losses, and enhanced switching performance. It includes an ultra-soft, fast recovery anti-parallel diode, contributing to its high efficiency and reduced switching noise. The typical recovery time (trr) is 100 ns at diF/dt of 500 A/μs, making it suitable for fast switching power circuits.

The package is a 3-pin TO-247 type, designed for through-hole mounting, providing easy integration into power modules and industrial assemblies. Its compact size with exact dimensions of length 19.81 mm and width 15.45 mm facilitates use in space-constrained applications.

This IGBT supports a wide operational temperature range from -40°C to 175°C, ensuring reliability under demanding environmental conditions. The device is lead-free and complies with halogen and antimony-free requirements, classified as a 'Green' device, fostering environmentally responsible designs.

Its positive temperature coefficient allows easy paralleling, beneficial when higher current capacity is required. Typical industrial uses include motor drives, uninterruptible power supplies (UPS), welding equipment, solar inverters, and induction heating cookers, reflecting its versatility and robustness.

DiodesZetex DGTD120T25S1PT represents an ideal solution for applications needing reliable, efficient, and high power semiconductor switching devices. Features advanced Field Stop Trench IGBT technology for low saturation voltage.

High-speed switching with a typical recovery time of 100 ns. Includes an ultra-soft, fast recovery anti-parallel diode for efficient operation. Designed for high power applications with a maximum power dissipation of 348 W.

Operating temperature range from -40°C to 175°C for reliability in harsh environments. Constructed with a lead-free finish and meets halogen and antimony-free environmental standards. Positive temperature coefficient allows easy parallel operation.

Compact dimensions with length 19.81 mm and width 15.45 mm fit standard through-hole mountings. Suitable for motor drives, UPS, welders, solar inverters, and IH cookers. Explore more high-quality semiconductor products in the DiodesZetex range at EnvMart for all your industrial and commercial electronics needs.