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Toshiba DTMOSIV N-Channel MOSFET 11.5 A 600 V Enhancement Mode 3-Pin TO-252 TK12P60W,RVQ(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | TK12P60W,RVQ(S |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 340mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 11.5 A provides robust power handling.
- 600 V maximum drain-source voltage ensures high voltage operation.
- Enhancement mode channel type for efficient switching performance.
- Surface mount TO-252 package with 3 pins for compact design.
- Maximum power dissipation rating of 100 W offers reliable thermal performance.
- Operating temperature range from -55°C to 150°C allows versatility in applications.
- Typical gate charge of 25 nC at Vgs enhances switching speed.
- Maximum gate-source voltage rating ±30 V protects against voltage spikes.
Product Description
Toshiba TK12P60W,RVQ(S is a high-performance DTMOSIV N-Channel MOSFET designed for power electronic applications. It supports a maximum continuous drain current of 11.5 A and can withstand drain-source voltages up to 600 V, making it suitable for various industrial, automotive, and consumer electronics use cases.
The device comes in a compact 3-pin TO-252 surface-mount package, allowing for reliable and efficient PCB mounting with optimized space utilization. Its enhancement mode channel type ensures efficient switching suitable for power management circuits.
With a maximum power dissipation of 100 W and an operating temperature range from -55°C to 150°C, this MOSFET can reliably operate in harsh environments encountered in industrial and automotive applications. Its maximum gate-source voltage of ±30 V and a typical gate charge of 25 nC at Vgs provide good control and switching speed for circuit designers.
The physical dimensions of length 6.6 mm, width 6.1 mm, and height 2.3 mm support compact device integration. Forward voltage is rated at -1.7 V which aids in efficiency considerations for switching applications.
This product is manufactured in China and complies with Toshiba's DTMOSIV series standards, though it does not hold any formal certifications or automotive standards. Maximum continuous drain current of 11.5 A provides robust power handling.
600 V maximum drain-source voltage ensures high voltage operation. Enhancement mode channel type for efficient switching performance. Surface mount TO-252 package with 3 pins for compact design. Maximum power dissipation rating of 100 W offers reliable thermal performance.
Operating temperature from -55°C to 150°C allows versatile application environments. Typical gate charge of 25 nC at Vgs enhances switching speed. Maximum gate-source voltage rating ±30 V protects against voltage spikes.
Compact device dimensions aid easy PCB integration.
Toshiba's TK12P60W,RVQ(S MOSFET is suitable for applications in power electronics, motor control, inverters, and power supply circuits in industrial, automotive, and consumer electronics sectors. Its robust power rating and reliable switching characteristics make it a valuable component for engineers requiring high-performance MOSFETs in demanding environments.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11.5 A, providing robust power handling capabilities.
This MOSFET can withstand a maximum drain-source voltage of 600 V, ensuring high voltage operation.
It comes in a surface mount TO-252 package with 3 pins, allowing for compact design and efficient PCB mounting.
The operating temperature range is from -55°C to 150°C, making it suitable for various environmental conditions.
The typical gate charge is 25 nC at Vgs, which enhances the switching speed of the device.
It has a maximum power dissipation rating of 100 W, offering reliable thermal performance.
The forward voltage is rated at -1.7 V, which aids in efficiency considerations for switching applications.
The maximum gate-source voltage rating is ±30 V, providing protection against voltage spikes.
The physical dimensions are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, supporting compact integration.
This model utilizes an N-channel type, which is known for efficient switching performance in power management circuits.
It is suitable for applications in power electronics, motor control, inverters, and power supply circuits in various sectors.
This product is manufactured in China, complying with Toshiba's DTMOSIV series standards.
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