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Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement Mode, 3-Pin TO-263 Package IRF9540NSTRLPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRF9540NSTRLPBF
Width 9.65mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 23A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 117mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 73nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.6V

Key Features

  • Type P channel with enhancement mode operation ensures efficient switching performance.
  • Maximum power dissipation of 110 W supports high power applications.
  • Surface mount TO-263 package enables compact PCB layouts.
  • Low on-resistance of 117 milliohms reduces conduction losses.
  • Operates reliably between -55°C and 150°C.
  • Maximum gate-source voltage rating of ±20 V protects against overvoltage.
  • Compact dimensions with length 10.67 mm, width 9.65 mm, and height 4.83 mm.
  • Typical gate charge of 73 nC allows fast switching speeds.

Product Description

Infineon's IRF9540NSTRLPBF is a robust and efficient HEXFET type P-channel MOSFET designed for power management in electronic circuits. It supports a maximum continuous drain current of 23 A and a maximum drain-source voltage of 100 V, making it suitable for a wide range of industrial and electronic applications.

This enhancement mode device utilizes a surface mount TO-263 package, allowing easy integration on compact PCB designs. The device boasts low on-resistance of 117 mΩ, which minimizes conduction losses and improves overall system efficiency.

Designed to reliably operate in harsh conditions, the MOSFET supports a broad temperature range from -55°C to 150°C. The maximum gate-source voltage rating of ±20 V protects the device from voltage spikes commonly encountered in power electronic circuits.

The IRF9540NSTRLPBF features a typical gate charge of 73 nC enabling high-speed switching with minimal energy loss. Its compact dimensions, including a length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm, facilitate versatile assembly options.

With a maximum power dissipation of 110 W and a forward voltage of approximately -1.6 V, this MOSFET provides reliable performance for power applications in industrial, automotive (non-automotive rated), manufacturing equipment, and general electronics.

Type P channel with enhancement mode ensures effective switching. Surface mount TO-263 package ideal for space-constrained layouts. High current and voltage ratings support demanding power requirements. Low Rds(on) minimizes power loss and heat generation.

Wide operating temperature range enhances device durability in industrial environments. Gate voltage tolerance facilitates protection against electrical overstress. Compact form factor for flexible electronic design integration.

Suitable for electronic components, power management, and semiconductor applications. Explore EnvMart's wide range of semiconductor devices including MOSFETs to find the best component tailored to your design and manufacturing needs.

Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement Mode, 3-Pin TO-263 Package IRF9540NSTRLPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 23 A.

It has a maximum drain-source voltage rating of 100 V.

The on-resistance is 117 milliohms, which helps reduce conduction losses.

The dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.

It operates reliably between -55°C and 150°C.

The maximum power dissipation is 110 W, making it suitable for high power applications.

The typical gate charge is 73 nC, allowing for fast switching speeds.

The maximum gate-source voltage rating is ±20 V, which protects against overvoltage.

This model uses a P-channel type with enhancement mode operation.

It is suitable for power management in industrial, automotive (non-automotive rated), manufacturing equipment, and general electronics applications.

The TO-263 package has 3 pins.

The country of origin for this model is India.

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