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Infineon HEXFET Type P-Channel Power MOSFET 23 A 100 V Enhancement Mode Surface Mount TO-263 IRF9540NSTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF9540NSTRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 117mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 73nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- Provides high efficiency with a maximum drain-source resistance of 117 milliohms.
- Capable of 110 W maximum power dissipation for demanding electronic applications.
- Operates reliably in wide temperature ranges from -55°C to 150°C.
- Features typical gate charge of 73 nC enabling fast switching performance.
- Includes robust 3-pin configuration suited for surface mount PCB layouts.
- Compatible with automotive and industrial applications requiring reliable power MOSFETs.
Product Description
Infineon IRF9540NSTRLPBF is a HEXFET Type P-Channel Power MOSFET designed for high current and voltage applications, offering a continuous drain current of 23 A and a maximum drain-source voltage of 100 V. This enhancement mode device is housed in a TO-263 surface mount package, making it ideal for efficient PCB assembly and compact electronic designs.
The MOSFET exhibits a very low drain-source resistance of 117 milliohms, reducing conduction losses and improving energy efficiency. It supports a maximum power dissipation of 110 watts, which allows for handling substantial electrical loads during operation.
Operating temperature ranges from -55°C minimum to 150°C maximum, ensuring robust performance in harsh industrial, automotive, and manufacturing environments. The gate charge of approximately 73 nC facilitates rapid switching speeds, important for power management and control circuits.
The device features a standard 3-pin layout, tailored for surface mount technology, enabling ease of integration into existing or new electronic systems. Despite the absence of specific automotive standards compliance, its build quality and performance make it suitable for many demanding applications.
Infineon's HEXFET MOSFETs are well regarded for blending power density, efficiency, and cost-effectiveness. This particular model, IRF9540NSTRLPBF, fits a wide range of electronics including power converters, motor controls, and general purpose switching.
High continuous drain current of 23 A for power-intensive designs. Low drain-source resistance minimizes power losses. Wide operation temperature supports varied industrial environments. Compact TO-263 package for surface mount applications.
Reliable 3-pin configuration simplifies PCB layout. Enhancement mode operation for precise control. Suitable for automotive, industrial, and power management circuits. Explore more components like Infineon's comprehensive MOSFET range in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The Infineon IRF9540NSTRLPBF has a maximum continuous drain current of 23 A.
This model supports a maximum drain-source voltage of 100 V.
The typical gate charge for the IRF9540NSTRLPBF is approximately 73 nC.
It is housed in a TO-263 surface mount package, suitable for efficient PCB assembly.
The maximum power dissipation for this model is 110 W, allowing it to handle substantial electrical loads.
The operating temperature range for the IRF9540NSTRLPBF is from -55°C to 150°C.
It features a low maximum drain-source resistance of 117 milliohms, which helps reduce conduction losses.
The IRF9540NSTRLPBF has a standard 3-pin configuration.
This model is a P-Channel MOSFET, designed for enhancement mode operation.
It is suitable for automotive and industrial applications requiring reliable power management and control circuits.
The height of the TO-263 package is 4.83 mm, and the width is 9.65 mm.
The maximum gate-source voltage for the IRF9540NSTRLPBF is -20 V to +20 V.
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