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Vishay N-Channel Power MOSFET, 50 A, 60 V, 3-Pin TO-263 Surface Mount IRLZ44SPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRLZ44SPBF |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.028Ω |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 2.5V |
| Transistor Configuration | Single |
Key Features
- Provides low on-resistance of 0.028 Ω at 5 V gate to source voltage.
- Maximum power dissipation rating of 150 W for reliable operation.
- Wide operating temperature range from -55°C to 175°C supports robust applications.
- Typical gate charge of 66 nC ensures efficient switching performance.
- Designed as a single transistor configuration for discrete power switching.
- Maximum gate-source voltage is ±10 V ensuring safe gate control.
- Features forward voltage of 2.5 V and dynamic dV/dt rating for improved reliability.
- Complies with IEC 61249-2-21 and RoHS 2002/95/EC standards.
Product Description
The Vishay IRLZ44SPBF is a high-quality N-Channel Power MOSFET designed for electronic and power applications requiring efficient switching and high current handling capability. It supports a maximum continuous drain current of 50 A and a drain-source voltage of up to 60 V. Packaged in a TO-263 (D2PAK) 3-pin surface mount type, this transistor provides excellent thermal dissipation capability and compact form factor for modern PCB layouts.
The device has a low on-state resistance of 0.028 Ω at a gate-source voltage of 5 V, minimizing power losses and heat generation during operation. With a maximum power dissipation of 150 W and an operating temperature range from -55°C to 175°C, it ensures reliable performance even in harsh industrial environments.
The typical gate charge of 66 nC at Vgs provides fast switching capabilities, making it ideal for power management, motor control, and DC-DC converter applications. The transistor is configured as a single element and supports a maximum gate-source voltage of ±10 V. The forward voltage of 2.5 V and dynamic dV/dt rating contribute to the overall robustness of the device.
This MOSFET complies with relevant IEC and RoHS standards, ensuring compatibility with international safety and environmental regulations. Its country of origin is China.
Ideal for use in industrial electronics, power supplies, motor drives, automotive circuits (non-automotive standard), and general-purpose switching. Its surface mount package facilitates easy integration into automatic assembly lines for manufacturing electronic devices.
Low drain-source resistance reduces on-state power losses. Robust maximum power dissipation rating for high current applications. Wide temperature operation supports demanding environments. Fast switching enabled by low gate charge value.
Standards compliance ensures quality and environmental safety. Explore more Power MOSFETs from Vishay and other leading brands at EnvMart for your industrial and laboratory electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
It supports a maximum drain-source voltage of 60 V.
The on-resistance at a gate-source voltage of 5 V is 0.028 Ω.
The maximum power dissipation rating is 150 W.
The operating temperature range is from -55°C to 175°C.
The typical gate charge is 66 nC at Vgs.
It is designed as a single transistor configuration.
This model is packaged in a TO-263 surface mount type.
The maximum gate-source voltage is ±10 V.
The forward voltage is 2.5 V.
It complies with IEC 61249-2-21 and RoHS 2002/95/EC standards.
The country of origin is China.
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