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DiodesZetex Isolated 2 N-Channel Power MOSFET 7.6A 20V Enhancement Mode 8-Pin SOIC DMN2041LSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMN2041LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, J-STD-020, UL 94V-0 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 41mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.16W |
| Typical Gate Charge Qg @ Vgs | 7.2nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- The device features an enhancement mode transistor configuration with an 8-pin SOIC surface mount package.
- Maximum gate source voltage ranges from -12 V to +12 V ensuring robust operation.
- Maximum drain source resistance is 41 milliohms, delivering efficient conduction.
- Forward voltage is rated at 0.7 volts for optimal switching performance.
- Maximum power dissipation reaches 1.16 watts, suitable for compact electronic designs.
- Operational temperature range spans from -55°C to +150°C allowing use in harsh environments.
- Typical gate charge is 7.2 nanocoulombs measured at Vgs, facilitating fast switching.
- Isolated transistor design minimizes interference in circuits, ideal for power management.
Product Description
DiodesZetex DMN2041LSD-13 is an isolated dual N-Channel Power MOSFET designed for advanced electronic applications requiring enhanced power efficiency and reliability.
This transistor features a maximum continuous drain current of 7.6 amperes and a drain-source voltage of 20 volts, operating in enhancement mode with a low on-resistance of 41 milliohms, making it suitable for high-speed switching circuits and power management modules.
Housed in a compact 8-pin SOIC surface mount package, it supports a maximum gate-source voltage from -12 to +12 volts and dissipates up to 1.16 watts, enabling operation in compact and thermally constrained environments.
The device guarantees temperature tolerance over the broad range of -55°C to +150°C, ensuring durable performance even in automotive and industrial power electronics. The typical gate charge of 7.2 nanocoulombs contributes to efficient switching speeds beneficial in high-frequency circuits.
Compliant with multiple industry standards such as MIL-STD-202, RoHS, AEC-Q101 automotive qualification, J-STD-020, and UL 94V-0 flame retardancy rating, this MOSFET meets stringent quality and reliability criteria.
The isolated dual N-Channel configuration enhances circuit design flexibility. Compact SOIC package supports surface mounting and reduces PCB space. Low gate charge and resistance enable high efficiency and reduced power loss.
Wide operating temperature range supports automotive and industrial applications. Certified to several industrial standards to assure quality and safety.
This product is ideal for use in industrial automation, power supply design, motor control circuits, and automotive electronic control units, where reliable switching and compact size are critical.
Explore more high-performance MOSFETs and power semiconductor components in the Electronics & Electricals section of EnvMart for your next design project.
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Frequently Asked Questions
The maximum continuous drain current for the DMN2041LSD-13 is 7.6 amperes.
This model operates within a temperature range of -55°C to +150°C.
The maximum drain-source voltage for this MOSFET is 20 volts.
The typical gate charge at Vgs for this model is 7.2 nanocoulombs.
The maximum power dissipation for the DMN2041LSD-13 is 1.16 watts.
It is housed in an 8-pin SOIC surface mount package.
The maximum gate-source voltage ranges from -12 volts to +12 volts.
The maximum drain-source resistance is 41 milliohms.
This model complies with the AEC-Q101 automotive standard.
It meets several standards including MIL-STD-202, RoHS, AEC-Q101, J-STD-020, and UL 94V-0.
This MOSFET has 2 elements per chip.
The forward voltage is rated at 0.7 volts for optimal switching performance.
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