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DiodesZetex Isolated 2 N-Channel MOSFET, 540 mA Continuous Drain Current, 20 V Drain Source Voltage, 6-Pin DMN2004DMK-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | DMN2004DMK-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-26 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 540mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225mW |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1.4V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features a 6-pin SOT-26 surface mount package for compact integration.
- It operates with an enhancement channel mode providing efficient switching.
- Maximum drain-source resistance is 900 mΩ ensuring low conduction losses.
- Maximum power dissipation is rated at 225 mW for reliable performance.
- Designed to operate across a wide temperature range from -65°C to +150°C.
- Compliant with standards including MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, and RoHS for quality assurance.
- Dual N-channel transistor configuration with isolated elements for better circuit design flexibility.
- Pin count of six facilitates multiple connection points in circuit layouts.
Product Description
DiodesZetex DMN2004DMK-7 is an isolated dual N-channel MOSFET designed for low power electronic applications. It features a 20 V maximum drain-source voltage and a continuous drain current rating of 540 mA, making it ideal for compact power switching and amplification circuits.
The device comes in a 6-pin SOT-26 surface mount package, providing a low-profile solution suitable for dense PCB designs. This MOSFET operates in enhancement mode and offers a maximum drain-source resistance of 900 mΩ, contributing to its efficiency and minimal power loss during operation.
With a maximum power dissipation of 225 mW and wide operating temperature range from -65°C up to +150°C, it delivers robust performance and reliability in diverse industrial, automotive, and consumer electronics environments.
Compliant with stringent standards such as MIL-STD-202, AEC-Q101 automotive qualification, J-STD-020 moisture sensitivity, UL 94V-0 flammability rating, and RoHS compliance, this MOSFET assures high quality and durability.
Its isolated dual element transistor configuration allows flexible design integration for circuits requiring multiple switching elements. The compact height of 1.3 mm, length of 3.1 mm, and width of 1.7 mm suit tight space constraints.
This MOSFET is supplied in a compact 6-pin SOT-26 package suitable for surface mounting. The low on-resistance ensures efficient current handling with minimal heat generation. Robust operating temperature range allows use in harsh conditions common in automotive and industrial applications.
Compliance with automotive standards supports use in vehicle electronic subsystems. Dual N-channel configuration enables advanced circuit designs with multiple transistor elements. Reliable power dissipation rating supports continuous operation under load.
RoHS compliance meets environmental and safety regulations.
This DiodesZetex DMN2004DMK-7 MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring efficient, compact, and reliable switching elements. Explore EnvMart’s extensive semiconductor catalog for similar high-quality components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 540 mA.
It has a maximum drain-source voltage of 20 V.
This model comes in a SOT-26 surface mount package.
The maximum power dissipation is rated at 225 mW.
It operates across a temperature range from -65°C to +150°C.
The maximum drain-source resistance is 900 mΩ.
This model features a pin count of six.
It operates in enhancement mode.
It is compliant with MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, and RoHS standards.
The dimensions are 1.3 mm in height, 3.1 mm in length, and 1.7 mm in width.
The maximum gate-source voltage is -8 V to +8 V.
It features an isolated dual N-channel transistor configuration.
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