DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET 3.1 A 30 V Enhancement 8-Pin ZXMHC3A01T8TA

DiodesZetex ZXMHC3A01T8TA Full Bridge 4 Type P, Type N-Channel Power MOSFET is a high-performance enhancement mode transistor engineered for versatile electronic applications. With a maximum continuous drain current of 3.1 A and a drain-source voltage rating of 30 V, this device supports efficient power switching and amplification in compact form factors.

The transistor's full bridge configuration incorporates four MOSFETs per chip, enabling robust control in motor drivers, power inverters, and other electronic circuits requiring precise switching. Surface mount packaging with 8 pins simplifies integration into modern printed circuit boards, enhancing production efficiency and scalability.

This MOSFET dissipates up to 1.7 W of power, with a robust operational temperature range from -55°C to +150°C, ensuring durable performance in harsh industrial environments. The device has a typical gate charge of 3.9 nC and withstands maximum gate-source voltages of -20 V to +20 V. Forward voltage drop is 0.95 V, supporting high-efficiency power conversion.

Physical dimensions are compact with a length of 6.7 mm, width of 3.7 mm, and height of 1.6 mm, facilitating space-saving designs. It complies with several industrial standards, including MIL-STD-202 for military reliability, UL 94V-0 for flammability, RoHS for environmental safety, AEC-Q101 for automotive quality, and J-STD-020 for moisture sensitivity.

This Power MOSFET is ideally suited for use in industrial automation, telecom equipment, automotive electronics, and power management systems requiring reliable high-speed switching and low conduction losses. It provides engineering flexibility for designers seeking a robust semiconductor solution with multiple environmental and compliance certifications.

Features a full bridge transistor configuration suitable for enhancement mode. Equipped with 8 pins for surface mount applications. Maximum power dissipation of 1.7 W ensures efficient heat management. Operates reliably across a temperature range from -55°C to +150°C.

Has a typical gate charge of 3.9 nC at rated gate-source voltage. Maximum gate-source voltage ratings are -20 V and +20 V. Compact dimensions: length 6.7 mm, width 3.7 mm, height 1.6 mm. Multiple industry approvals including MIL-STD-202, RoHS, and AEC-Q101.

Designed for surface mount technology facilitating automated PCB assembly. Explore more power semiconductor devices from DiodesZetex and other leading manufacturers to enhance your product designs at EnvMart.