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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | ZVP2110GTA |
| Width | 3.55mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 310mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
DiodesZetex ZVP2110GTA is a P-Channel enhancement mode MOSFET designed for surface mount applications, housed in a 4-pin SOT-223 package. This device supports a maximum continuous drain current of 310mA and a drain-source voltage rating of 100V, providing an excellent balance of moderate current handling and voltage tolerance. It is well suited for electronics and electrical device manufacturing including industrial and automotive applications.
This MOSFET offers a maximum drain-source resistance of 8 ohms, reducing power losses and contributing to efficient switching performance. With a gate-source voltage range from -20V to +20V, it allows flexible control voltages in switching circuits. The device supports operating temperature from -55°C to 150°C, making it reliable in harsh environments. It complies with the automotive standard AEC-Q101, ensuring robustness and quality for automotive applications.
Its compact size (6.55mm in length, 3.55mm in width, and 1.65mm in height) allows integration into space-constrained PCB layouts. The maximum power dissipation of 2W requires suitable thermal design to maintain performance. A forward voltage of 1.5V is typical for this transistor, useful for power calculations.
This MOSFET is commonly used in industrial electronics, automotive systems, power management, and discrete semiconductor applications. It is suitable for switching, amplification, and driver circuits.
Features a 4-pin SOT-223 package suitable for compact circuit design. Maximum continuous drain current of 310mA ensures moderate current handling capability. Maximum drain-source voltage of 100V suitable for low to medium voltage applications.
Low maximum drain-source resistance of 8 ohms improves efficiency. Operates reliably from -55°C minimum to 150°C maximum temperature. Supports gate-source voltage range of -20V to +20V providing flexibility in switching control.
Maximum power dissipation of 2W aids in moderate thermal management. Compact dimensions: length 6.55mm, width 3.55mm, height 1.65mm. Forward voltage of 1.5V typical helps in circuit design calculations. Automotive standard compliant with AEC-Q101 indicating high reliability standards.
Explore the comprehensive selection of DiodesZetex MOSFETs and related discrete semiconductors in EnvMart’s Electronics & Electricals category for optimized industrial and automotive solutions.
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