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DiodesZetex P-Channel MOSFET 310mA 100V Enhancement Mode Surface Mount SOT-223 4-Pin ZVP2110GTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model ZVP2110GTA
Width 3.55mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 310mA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 8Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Features a 4-pin SOT-223 package suitable for compact circuit design.
  • Maximum continuous drain current of 310mA ensures moderate current handling capability.
  • Maximum drain-source voltage of 100V suitable for low to medium voltage applications.
  • Low maximum drain-source resistance of 8 ohms improves efficiency.
  • Operates reliably from -55°C minimum to 150°C maximum temperature.
  • Supports gate-source voltage range of -20V to +20V providing flexibility in switching control.
  • Maximum power dissipation of 2W aids in moderate thermal management.
  • Forward voltage of 1.5V typical helps in circuit design calculations.

Product Description

DiodesZetex ZVP2110GTA is a P-Channel enhancement mode MOSFET designed for surface mount applications, housed in a 4-pin SOT-223 package. This device supports a maximum continuous drain current of 310mA and a drain-source voltage rating of 100V, providing an excellent balance of moderate current handling and voltage tolerance. It is well suited for electronics and electrical device manufacturing including industrial and automotive applications.

This MOSFET offers a maximum drain-source resistance of 8 ohms, reducing power losses and contributing to efficient switching performance. With a gate-source voltage range from -20V to +20V, it allows flexible control voltages in switching circuits. The device supports operating temperature from -55°C to 150°C, making it reliable in harsh environments. It complies with the automotive standard AEC-Q101, ensuring robustness and quality for automotive applications.

Its compact size (6.55mm in length, 3.55mm in width, and 1.65mm in height) allows integration into space-constrained PCB layouts. The maximum power dissipation of 2W requires suitable thermal design to maintain performance. A forward voltage of 1.5V is typical for this transistor, useful for power calculations.

This MOSFET is commonly used in industrial electronics, automotive systems, power management, and discrete semiconductor applications. It is suitable for switching, amplification, and driver circuits.

Features a 4-pin SOT-223 package suitable for compact circuit design. Maximum continuous drain current of 310mA ensures moderate current handling capability. Maximum drain-source voltage of 100V suitable for low to medium voltage applications.

Low maximum drain-source resistance of 8 ohms improves efficiency. Operates reliably from -55°C minimum to 150°C maximum temperature. Supports gate-source voltage range of -20V to +20V providing flexibility in switching control.

Maximum power dissipation of 2W aids in moderate thermal management. Compact dimensions: length 6.55mm, width 3.55mm, height 1.65mm. Forward voltage of 1.5V typical helps in circuit design calculations. Automotive standard compliant with AEC-Q101 indicating high reliability standards.

Explore the comprehensive selection of DiodesZetex MOSFETs and related discrete semiconductors in EnvMart’s Electronics & Electricals category for optimized industrial and automotive solutions.

DiodesZetex P-Channel MOSFET 310mA 100V Enhancement Mode Surface Mount SOT-223 4-Pin ZVP2110GTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 310mA.

The maximum drain-source voltage rating is 100V, suitable for low to medium voltage applications.

This model has dimensions of 6.55mm in length, 3.55mm in width, and 1.65mm in height.

It supports a gate-source voltage range of -20V to +20V, providing flexibility in switching control.

The maximum power dissipation for this model is 2W, which aids in moderate thermal management.

The maximum drain-source resistance is 8 ohms, which improves efficiency during operation.

It operates reliably from a minimum temperature of -55°C to a maximum temperature of 150°C.

This model complies with the automotive standard AEC-Q101, ensuring quality for automotive applications.

It is housed in a 4-pin SOT-223 package, suitable for compact circuit design.

The typical forward voltage for the ZVP2110GTA is 1.5V, useful for circuit design calculations.

This model features a P-Channel type, designed for enhancement mode operation.

It is commonly used in industrial electronics, automotive systems, power management, and discrete semiconductor applications.

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