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DiodesZetex P-Channel MOSFET 3A 60V Enhancement Mode Surface Mount 6-Pin SOT-23 ZXMP6A17E6TA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | ZXMP6A17E6TA |
| Width | 1.8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 17.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
Key Features
- The MOSFET features enhancement mode operation for efficient switching.
- It is housed in a compact 6-Pin SOT-23 package suitable for surface mounting.
- Maximum continuous drain current of 3 amperes allows moderate power handling.
- Low maximum drain-source resistance of 125 milliohms reduces power losses.
- Can dissipate up to 1.7 watts of power with operation from -55°C to 150°C.
- Typical gate charge at Vgs is 17.7 nanocoulombs for fast switching performance.
- Maximum gate-source voltage rating is -20 to +20 volts ensuring robust gate control.
- Compact dimensions optimize PCB space usage.
Product Description
The DiodesZetex ZXMP6A17E6TA is a high-performance P-Channel MOSFET targeted for surface mount applications requiring low voltage and moderate current operation. With a maximum continuous drain current of 3 amperes and drain-source voltage up to 60 volts, this enhancement mode MOSFET offers efficient and reliable switching capabilities.
Encased in a compact 6-Pin SOT-23 package measuring 3.1 mm in length, 1.8 mm in width, and 1.3 mm in height, the device is designed for dense circuit board layouts. The low maximum on-resistance of 125 milliohms ensures minimal power dissipation and heat generation, complemented by its maximum power dissipation rating of 1.7 watts.
This MOSFET can operate in a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments. It complies with the automotive qualification standard AEC-Q101, highlighting its robustness and reliability for automotive electronics and demanding industrial applications.
The typical gate charge of 17.7 nanocoulombs at the specified gate-source voltage provides fast switching speeds, enhancing its usage in frequency switching power supplies, DC-DC converters, battery management, and other power control systems.
Its gate-source voltage range of -20 to +20 volts protects the device from gate voltage spikes while maintaining stable operation. The device’s forward voltage of -0.95 volts aids in efficient conduction during operation.
The ZXMP6A17E6TA is ideal for use in electronic components, power management ICs, automotive electronics, and other applications that require reliable, low-voltage P-channel MOSFET devices with surface mount packaging.
The MOSFET features enhancement mode operation for efficient switching. It is housed in a compact 6-Pin SOT-23 package suitable for surface mounting. Maximum continuous drain current of 3 amperes allows moderate power handling.
Low maximum drain-source resistance of 125 milliohms reduces power losses. Can dissipate up to 1.7 watts of power with operation from -55°C to 150°C. Typical gate charge at Vgs is 17.7 nanocoulombs for fast switching performance.
Maximum gate-source voltage rating is -20 to +20 volts ensuring robust gate control. Compact dimensions optimize PCB space usage. Automotive standard AEC-Q101 certification ensures suitability for automotive use. Designed for electronic circuit and industrial applications requiring P-Channel MOSFETs.
Explore more in the Electronics & Electricals category for additional semiconductor components and MOSFET devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 3 amperes.
This MOSFET has a maximum drain-source voltage rating of 60 volts.
The SOT-23 package measures 3.1 mm in length, 1.8 mm in width, and 1.3 mm in height.
It can dissipate up to 1.7 watts of power during operation.
The typical gate charge at the specified gate-source voltage is 17.7 nanocoulombs.
This MOSFET operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage rating is -20 to +20 volts.
It complies with the automotive qualification standard AEC-Q101.
The maximum drain-source resistance is 125 milliohms.
This model features a P-channel type channel.
It is suitable for applications such as frequency switching power supplies, DC-DC converters, and battery management systems.
The forward voltage is -0.95 volts.
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