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DiodesZetex N-Channel MOSFET 320 mA 100 V Enhancement Mode 3-Pin TO-92 ZVNL110ASTZ

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZVNL110ASTZ
Width 2.41mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 320mA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 3Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 700mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • The MOSFET features an enhancement mode channel suitable for switching applications.
  • It supports a maximum power dissipation of 700 mW for reliable performance.
  • The device offers a maximum drain-source resistance of 3 ohms.
  • Operating temperature range spans from -55°C to 150°C.
  • The maximum gate-source voltage ranges from -20 to +20 volts.
  • It is housed in a compact TO-92 through-hole package with 3 pins.
  • Forward voltage drop is rated at 1.5 V for efficient conduction.
  • Its physical dimensions are 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width.

Product Description

DiodesZetex ZVNL110ASTZ is a reliable N-Channel MOSFET transistor designed specifically for enhancement-mode switching applications. With a maximum continuous drain current of 320 mA and a maximum drain-source voltage of 100 V, this device is suitable for a variety of electronic circuits and discrete component applications.

The MOSFET is housed in a TO-92 package that provides through-hole mounting compatibility, facilitating easy integration into printed circuit boards. It supports a maximum power dissipation of 700 mW, ensuring stable operation across its rated temperatures from -55°C to 150°C, making it suitable for industrial and consumer electronics environments.

Key electrical attributes include a maximum drain-source resistance of 3 ohms and a gate-source voltage tolerance of -20 to +20 V, which allows for versatile control methods. The device's forward voltage drop of 1.5 V contributes to efficient switching and conduction performance.

Physically compact, the MOSFET measures 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width, supporting high-density electronic assembly. It features 3 pins configured for direct through-hole mounting.

This MOSFET is extensively used in industrial, manufacturing, electronics design, and repair contexts where compact, efficient, and reliable switching components are required. The MOSFET features an enhancement mode channel suitable for switching applications.

It supports a maximum power dissipation of 700 mW for reliable performance. The device offers a maximum drain-source resistance of 3 ohms. Operating temperature range spans from -55°C to 150°C. The maximum gate-source voltage ranges from -20 to +20 volts.

It is housed in a compact TO-92 through-hole package with 3 pins. Forward voltage drop is rated at 1.5 V for efficient conduction. Its physical dimensions are 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width. Explore more MOSFETs and discrete semiconductors in the Electronics & Electricals category for your projects and industrial needs at EnvMart.

DiodesZetex N-Channel MOSFET 320 mA 100 V Enhancement Mode 3-Pin TO-92 ZVNL110ASTZ
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Frequently Asked Questions

The maximum continuous drain current for this model is 320 mA.

It can handle a maximum drain-source voltage of 100 V.

This MOSFET supports a maximum power dissipation of 700 mW.

The operating temperature range spans from -55°C to 150°C.

The forward voltage drop is rated at 1.5 V.

The maximum gate-source voltage ranges from -20 to +20 volts.

This model measures 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width.

It features 3 pins configured for through-hole mounting.

It is housed in a TO-92 package, suitable for through-hole mounting.

The maximum drain-source resistance is 3 ohms.

This device uses an N-channel type for enhancement mode applications.

The country of origin for this MOSFET is India.

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