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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVNL110ASTZ |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 320mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
DiodesZetex ZVNL110ASTZ is a reliable N-Channel MOSFET transistor designed specifically for enhancement-mode switching applications. With a maximum continuous drain current of 320 mA and a maximum drain-source voltage of 100 V, this device is suitable for a variety of electronic circuits and discrete component applications.
The MOSFET is housed in a TO-92 package that provides through-hole mounting compatibility, facilitating easy integration into printed circuit boards. It supports a maximum power dissipation of 700 mW, ensuring stable operation across its rated temperatures from -55°C to 150°C, making it suitable for industrial and consumer electronics environments.
Key electrical attributes include a maximum drain-source resistance of 3 ohms and a gate-source voltage tolerance of -20 to +20 V, which allows for versatile control methods. The device's forward voltage drop of 1.5 V contributes to efficient switching and conduction performance.
Physically compact, the MOSFET measures 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width, supporting high-density electronic assembly. It features 3 pins configured for direct through-hole mounting.
This MOSFET is extensively used in industrial, manufacturing, electronics design, and repair contexts where compact, efficient, and reliable switching components are required. The MOSFET features an enhancement mode channel suitable for switching applications.
It supports a maximum power dissipation of 700 mW for reliable performance. The device offers a maximum drain-source resistance of 3 ohms. Operating temperature range spans from -55°C to 150°C. The maximum gate-source voltage ranges from -20 to +20 volts.
It is housed in a compact TO-92 through-hole package with 3 pins. Forward voltage drop is rated at 1.5 V for efficient conduction. Its physical dimensions are 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width. Explore more MOSFETs and discrete semiconductors in the Electronics & Electricals category for your projects and industrial needs at EnvMart.
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