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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 480μm |
| Length | 1.07mm |
| Model | DMN62D1LFB-7B |
| Width | 670μm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | X1-DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 407mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 0.45nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
DiodesZetex DMN62D1LFB-7B N-Channel MOSFET is a high-efficiency 3-pin surface mount device designed for power management applications requiring low on-state resistance and superior switching performance. With a continuous drain current rating of 407 mA and a maximum drain-source voltage of 60 V, this enhancement mode MOSFET is ideal for load switching and switching power supplies.
The device features a compact X1-DFN package with a small form factor measuring 1.07 mm in length, 670 μm in width, and 480 μm in height, enabling high-density PCB layouts. It meets the automotive industry standard AEC-Q101, making it suitable for automotive and industrial applications requiring stringent quality and reliability standards.
The typical gate charge of 0.45 nC allows for fast, efficient switching with minimal gate drive power consumption. The MOSFET has a low maximum drain-source resistance (Rds(on)) of 3 milliohms, minimizing power losses and heat dissipation during conduction. It supports a maximum gate-source voltage of 20 V and a forward voltage drop of 1.3 V, contributing to efficient power handling.
Operating temperature ranges from -55°C to 150°C, ensuring performance stability across a wide thermal envelope. The device is qualified as a green product, being lead-free and halogen and antimony free, adhering to environmental and safety standards.
This MOSFET is well suited for industrial, automotive, and consumer electronics applications, such as load switching, power distribution, and DC-DC converters. This MOSFET features enhancement mode operation for efficient switching performance.
It has a low on-resistance of 3 milliohms to reduce power losses. Maximum power dissipation is rated at 500 milliwatts for thermal stability. Designed with automotive standard AEC-Q101 compliance for reliability. Its package dimensions include a length of 1.07 mm and width of 670 micrometers.
Typical gate charge of 0.45 nanocoulombs enables fast switching speed. Maximum gate-source voltage is 20 volts ensuring robust gate drive tolerance. Forward voltage drop of 1.3 volts supports efficient conduction. Operating temperature range extends from -55 to 150 degrees Celsius.
Explore more DiodesZetex semiconductor products in the MOSFET category on EnvMart for high-quality electronic components.
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