DiodesZetex P-Channel Enhancement Mode MOSFET, 280 mA, 60 V, TO-92 Package ZVP2106ASTZ

DiodesZetex ZVP2106ASTZ is a P-Channel Enhancement Mode MOSFET transistor specifically designed for low current, medium voltage applications. With a maximum continuous drain current of 280 mA and a maximum drain-source voltage of 60 V, this device is reliable for switching and amplification tasks in electronic circuits.

This MOSFET comes in a compact TO-92 package featuring three pins designed for through-hole mounting, making it easily adaptable into traditional PCB assembly techniques.

The device features a maximum on-resistance of 5 Ω which reduces power loss and heat generation during operation, along with a power dissipation capacity of 700 mW. It operates safely over a wide temperature range from -55°C to 150°C, providing durability and stability in diverse industrial and commercial environments.

The maximum gate-source voltage ratings of -20 V to +20 V allow precise gate voltage control ensuring efficient device functionality.

Its small physical size measuring 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width makes it suitable for compact electronic designs. Common use cases include semiconductor discrete component assemblies in consumer electronics, industrial controls, and power management circuits.

Features a maximum continuous drain current of 280 mA ensuring reliable low current switching. Supports maximum drain-source voltage of 60 V suitable for medium voltage applications. Employs an enhancement mode channel for efficient on/off control.

Packaged in compact TO-92 through-hole mount type with 3 pins for easy PCB integration. Maximum drain source resistance of 5 Ω for minimal power loss in circuits. Capable of maximum power dissipation up to 700 mW allowing moderate energy handling.

Operates over a temperature range from -55°C to 150°C, suitable for varied environmental conditions. Maximum gate-source voltage rating of -20 V to +20 V ensures robust gate control. Physical dimensions: length 4.77 mm, height 4.01 mm, width 2.41 mm, facilitating compact board design.

Ideal for discrete semiconductor applications in electronics, power, and industrial control circuits. Explore more MOSFETs and discrete semiconductors for your industrial, electronic design, and manufacturing needs with EnvMart's extensive catalog.