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Vishay SQ Rugged Type P-Channel MOSFET, 2.2 A, 20 V, Enhancement Mode, 3-Pin SOT-23 SQ2301ES-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SQ2301ES-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- High maximum continuous drain current of 2.2 amperes for efficient switching.
- Drain-source voltage rating of 20 volts suitable for low voltage applications.
- Compact 3-pin SOT-23 surface mount package for space-sensitive designs.
- Enhancement mode channel operation ensuring reliable performance.
- Maximum power dissipation of 3 watts allowing robust thermal handling.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Low typical gate charge of 5 nanocoulombs at Vgs for fast switching capabilities.
- Meets automotive standard AEC-Q101 ensuring quality for automotive applications.
Product Description
Vishay SQ2301ES-T1-GE3 is a P-Channel MOSFET transistor from the SQ Rugged series, designed for high reliability and performance in power switching applications.
This device supports a maximum continuous drain current of 2.2 A with a drain-source voltage rating of 20 V, making it ideal for low-voltage electronic circuits requiring efficient power management.
The enhancement mode channel ensures stable and predictable switching characteristics, while the compact 3-pin SOT-23 surface mount package provides ease of integration in densely packed PCB layouts.
Featuring a maximum power dissipation of 3 W and wide operating temperature range from -55°C to 175°C, the MOSFET is suitable for industrial, automotive, and commercial electronics applications subjected to temperature extremes.
The device's low typical gate charge of 5 nC improves switching speed and reduces power losses during transitions, contributing to energy-efficient design implementations. High maximum continuous drain current of 2.2 amperes for efficient switching.
Drain-source voltage rating of 20 volts suitable for low voltage applications. Compact 3-pin SOT-23 surface mount package for space-sensitive designs. Enhancement mode channel operation ensuring reliable performance. Maximum power dissipation of 3 watts allowing robust thermal handling.
Wide operating temperature range from -55°C to 175°C for harsh environments. Low typical gate charge of 5 nanocoulombs at Vgs for fast switching capabilities. Meets automotive standard AEC-Q101 ensuring quality for automotive applications.
Forward voltage of -1.2 volts supporting efficient conduction.
This MOSFET transistor is applicable in industrial power control, automotive electronics, consumer devices, and embedded systems requiring rugged performance and reliability. Its design supports surface mounting, easing manufacturing and assembly processes.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SQ2301ES-T1-GE3 is 2.2 A.
This model has a drain-source voltage rating of 20 V, making it suitable for low voltage applications.
The SOT-23 package has dimensions of 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The typical gate charge for the Vishay SQ2301ES-T1-GE3 is 5 nanocoulombs at Vgs.
It has a maximum power dissipation of 3 watts, allowing for robust thermal handling.
The operating temperature range for this model is from -55°C to 175°C.
This device meets the automotive standard AEC-Q101, ensuring quality for automotive applications.
It uses an enhancement mode channel, which ensures stable and predictable switching characteristics.
This model features a 3-pin configuration suitable for surface mounting.
The maximum gate-source voltage for this device is -8 V to +8 V.
This MOSFET is applicable in industrial power control, automotive electronics, consumer devices, and embedded systems requiring rugged performance.
The forward voltage of the Vishay SQ2301ES-T1-GE3 is -1.2 V, supporting efficient conduction.
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