Vishay TrenchFET Type P-Channel MOSFET 30 V 23 A Enhancement Mode 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

Vishay SISS27DN-T1-GE3 is a high-performance TrenchFET type P-Channel MOSFET designed for discrete semiconductor applications requiring efficient power switching and amplification.

It operates at a maximum drain source voltage of 30 V with a continuous drain current capability of 23 A, suitable for industrial, automotive, and consumer electronics power management systems.

The device is housed in an 8-pin PowerPAK 1212 surface mount package which allows compact PCB designs with excellent thermal performance and ease of assembly. This enhancement mode MOSFET features a low on-resistance of 9 milliohms, enabling lower conduction losses and improved efficiency in switching circuits.

With a maximum power dissipation of 57 W and an operating temperature range from -55°C up to 150°C, this MOSFET supports demanding electrical environments and enhances reliability for long-term use.

The gate can tolerate voltages up to ±20 V, allowing robust gate drive designs. Typical gate charge of 92 nC ensures fast switching speeds for higher frequency applications. Physical dimensions of 3.3 mm length and width with a 0.78 mm height make it ideal for dense circuit board layouts where space is limited.

This component is manufactured in China, adhering to Vishay's quality standards, but does not carry specific certification approvals.

Vishay TrenchFET MOSFETs are commonly applied in industrial power supplies, automotive electronics, motor control, and consumer electronics for efficient electrical switching and control.

The MOSFET features an 8-pin PowerPAK 1212 surface mount package. Maximum continuous drain current is 23 A with a maximum voltage of 30 V. Low maximum drain source resistance of 9 milliohms for minimal conduction loss. Typical gate charge is 92 nC, enabling fast switching.

Operating temperature range is -55°C to 150°C for wide environment compatibility. Maximum power dissipation of 57 W supports high power applications. Gate source voltage rating of ±20 V supports robust gate control. Compact footprint dimensions of 3.3 mm by 3.3 mm by 0.78 mm height.

Explore Vishay semiconductor products and industrial MOSFETs on EnvMart for reliable and efficient power discrete solutions.