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Vishay P-Channel MOSFET 5.1 A 60 V Enhancement Type, 3-Pin TO-252 Package IRFR9014TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | IRFR9014TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IRFR |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5.5V |
Key Features
- Maximum continuous drain current of 5.1 amperes suitable for moderate loads.
- Maximum drain-source voltage rating of 60 volts ensures reliable operation.
- Enhancement mode channel type provides efficient switching performance.
- Package type TO-252 designed for surface mount assembly.
- Low on-resistance of 500 milliohms reduces power loss during conduction.
- Typical gate charge of 12 nanocoulombs at gate-source voltage of 12 volts.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Maximum power dissipation rating of 25 watts for thermal management.
Product Description
Vishay IRFR9014TRPBF is a P-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a continuous drain current rating of 5.1 A and a maximum drain-source voltage of 60 V, making it suitable for various industrial, commercial, and electronic circuit applications requiring efficient power control.
This MOSFET comes in a TO-252 package optimized for surface mounting, allowing compact circuit integration. It features a low on-resistance of 500 milliohms that helps reduce conduction losses and improves efficiency in power switching circuits. The device supports a wide operating temperature range from -55°C to 150°C, ensuring reliable operation in demanding environments.
The typical gate charge is 12 nC at a gate voltage of 12 V, which enables fast switching speeds in discrete semiconductor applications. Its maximum gate-source voltage rating of -20 V to +20 V provides protection against voltage spikes. With a power dissipation capability of 25 W, the IRFR9014TRPBF can handle moderate levels of thermal load during operation.
The compact dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) allow flexible PCB layout design. This product is ideal for use in electronic circuits, power management, motor control, automotive electronics, industrial automation, and other applications requiring discrete semiconductor components.
Maximum continuous drain current of 5.1 amperes suitable for moderate loads. Maximum drain-source voltage rating of 60 volts ensures reliable operation. Enhancement mode channel type provides efficient switching performance.
Package type TO-252 designed for surface mount assembly. Low on-resistance of 500 milliohms reduces power loss during conduction. Typical gate charge of 12 nanocoulombs at gate-source voltage of 12 volts. Wide operating temperature range from -55°C to 150°C supports harsh environments.
Maximum power dissipation rating of 25 watts for thermal management. Device dimensions: length 6.73 mm, width 6.22 mm, and height 2.38 mm. Maximum gate-source voltage ratings of -20 V to +20 V prevent device damage. Explore more discrete semiconductor components from Vishay and browse our extensive electronics catalog at EnvMart for quality MOSFETs and related power control devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.1 amperes, making it suitable for moderate loads.
The maximum drain-source voltage rating is 60 volts, ensuring reliable operation in various applications.
This MOSFET comes in a TO-252 package, which is designed for surface mount assembly.
The on-resistance is 500 milliohms, which helps reduce power loss during conduction.
The typical gate charge at a gate-source voltage of 12 volts is 12 nanocoulombs.
The maximum power dissipation rating is 25 watts, allowing for effective thermal management during operation.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
The maximum gate-source voltage rating is -20 V to +20 V, providing protection against voltage spikes.
This model uses an enhancement mode channel type, which provides efficient switching performance.
It is suitable for various applications including electronic circuits, power management, motor control, and automotive electronics.
This device has a pin count of 3, which is typical for its package type.
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