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STMicroelectronics N-Channel IGBT 25 A 450 V 3-Pin TO-252 Surface Mount Automotive Grade STGD20N45LZAG

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STGD20N45LZAG
Width 6.2mm
Mount Type Surface
Series Automotive Grade
Energy Rating 300mJ
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101
Pin Count 3
Maximum Continuous Collector Current Ic 25A
Maximum Collector Emitter Voltage Vceo 450V
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V
Automotive Standard AEC-Q101
Channel Type N
Maximum Power Dissipation Pd 150W
Maximum Gate Emitter Voltage VGEO 16 V

Key Features

  • Enables efficient coil driving in automotive ignition systems.
  • Features low on-state voltage with high SCIS energy capability of 300 mJ.
  • Operates over a wide temperature range from -55°C to 175°C.
  • Includes ESD-protected logic level gate input and integrated gate resistor.
  • Complies with automotive standard AEC-Q101 for reliability.
  • Designed for high pulsed current capability and gate-collector high voltage clamping.
  • Compact dimensions with length 6.6 mm, width 6.2 mm, and height 2.4 mm.

Product Description

STMicroelectronics STGD20N45LZAG is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for automotive and industrial applications requiring robust and efficient switching. This IGBT supports a maximum continuous collector current of 25 A and withstands voltages up to 450 V, packaged in a compact 3-pin TO-252 surface mount form factor optimized for PCB mounting.

The device employs Advanced PowerMESH™ technology that enhances performance by delivering a very low on-state voltage and high SCIS energy capability of 300 mJ at 25°C, ensuring durable operation even in harsh automotive ignition system environments. Its logic level gate input is protected against ESD, and an integrated gate resistor simplifies circuit design by requiring no additional external gate protection components.

With a maximum operating temperature of 175°C and minimum rated temperature of -55°C, this automotive grade IGBT meets the stringent automotive standard AEC-Q101, assuring reliability and performance in critical conditions. The device also provides rapid switching speed with an 8.4 μs switching speed, suitable for high-efficiency power control.

Compact physical dimensions (6.6 mm length, 6.2 mm width, 2.4 mm height) allow for dense PCB layouts while maintaining high power dissipation of 150 W. The maximum collector-emitter saturation voltage is 1.55 V, supporting energy efficient conduction with minimal losses.

Automotive grade N-Channel IGBT for coil driving and power management. Advanced PowerMESH™ technology for enhanced durability and low voltage drop. Integrated gate resistor and ESD gate-emitter protection ensure robust circuit protection.

High SCIS energy rating of 300 mJ at 25°C ensures tolerance to electrical stress. Compliant with AEC-Q101 automotive industry standards for quality assurance. Wide operating temperature range from -55°C to 175°C for harsh environments.

Compact TO-252 3-pin package for surface mounting flexibility. High power dissipation rating of 150 W supports demanding applications.

This STMicroelectronics STGD20N45LZAG IGBT is ideal for use in automotive ignition systems, industrial power switching, and other high-reliability switching applications. It supports robust operation under thermal and electrical stress, making it suitable for manufacturing, automotive, and industrial electronic assemblies.

Explore more semiconductor components and discrete power devices in our Electronics & Electricals category at EnvMart for quality, reliability, and advanced technology parts.

STMicroelectronics N-Channel IGBT 25 A 450 V 3-Pin TO-252 Surface Mount Automotive Grade STGD20N45LZAG
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Frequently Asked Questions

The maximum continuous collector current for the STMicroelectronics STGD20N45LZAG is 25 A.

This model has a maximum collector-emitter voltage rating of 450 V.

The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

It operates over a wide temperature range from -55°C to 175°C.

The energy rating for this model is 300 mJ at 25°C.

The maximum power dissipation for this IGBT is 150 W.

Yes, it complies with the AEC-Q101 automotive standard for reliability.

It includes an ESD-protected logic level gate input.

The maximum gate-emitter voltage for this IGBT is 16 V.

The maximum collector-emitter saturation voltage is 1.55 V.

It is suitable for automotive ignition systems, industrial power switching, and other high-reliability switching applications.

This model uses a surface mount type for PCB mounting.

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