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DiodesZetex Silicon Junction Isolated Switching Diode 400 mA 250 V 4-Pin SOT-143 BAV23-7

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 3mm
Length 3mm
Model BAV23-7
Width 1.4mm
Mount Type Surface
Series BAV23
Maximum Operating Temperature 150°C
Package Type SOT-143
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Power Dissipation Pd 400mW
Diode Configuration Isolated
Peak Non-Repetitive Forward Surge Current Ifsm 9A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250V

Key Features

  • Surface mount diode in compact SOT-143 4-pin package for PCB applications.
  • Maximum forward current is 400 mA with a power dissipation of 400 mW.
  • Fast recovery time of 50 ns ensures efficient switching performance.
  • Operating temperature range from -65°C to 150°C supports harsh environments.
  • Peak non-repetitive forward surge current rating of 9 A for transient conditions.
  • Maximum forward voltage drop of 1.25 V reduces power loss.
  • No automotive or other special certifications, designed for general electronic applications.

Product Description

DiodesZetex BAV23-7 is a silicon junction, isolated small signal switching diode designed for surface mount technology with a SOT-143 4-pin package. It supports a maximum forward current of 400 mA and a peak reverse voltage of 250 V, making it suitable for a variety of electronic switching and signal conditioning applications.

This diode features a fast peak reverse recovery time of 50 nanoseconds, allowing quick switching to minimize losses in high-frequency applications. The device tolerates operating temperatures from -65°C to 150°C, suitable for use in demanding industrial and commercial electronics environments.

The compact dimensions of 3 mm length, 3 mm height, and 1.4 mm width make it ideal for space-conscious PCB layouts. With a maximum forward voltage of 1.25 V, the diode ensures efficient current conduction with minimal voltage drop.

It is rated for a peak non-repetitive forward surge current of 9 A, accommodating momentary surge conditions without damage. The power dissipation is limited to 400 mW, adhering to thermal design requirements.

This diode is not automotive certified but is widely used in discrete semiconductor applications across electronic manufacturing, industrial controls, telecommunication equipment, and consumer electronics.

Surface mount SOT-143 package with 4 pins. 400 mA maximum forward current and 250 V peak reverse voltage. 50 ns peak reverse recovery time for fast switching. Operating temperature range from -65°C to 150°C. Compact physical dimensions facilitate PCB integration.

Peak surge current rating of 9 A for reliability during transient events. Power dissipation below 400 mW for thermal safety.

This product fits into the Electronics & Electricals category, specifically under Discrete Semiconductors and Switching Diodes on EnvMart. It is ideal for engineers and designers looking for reliable small signal diodes for switching and signal processing circuits.

DiodesZetex Silicon Junction Isolated Switching Diode 400 mA 250 V 4-Pin SOT-143 BAV23-7
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Frequently Asked Questions

The maximum forward current of the BAV23-7 diode is 400 mA.

This model has a peak reverse voltage rating of 250 V.

The power dissipation limit for the BAV23-7 is 400 mW.

The BAV23-7 is packaged in a SOT-143 4-pin surface mount configuration.

The operating temperature range for this diode is from -65°C to 150°C.

The peak non-repetitive forward surge current rating for this model is 9 A.

The maximum forward voltage drop of the BAV23-7 is 1.25 V.

The peak reverse recovery time for the BAV23-7 is 50 ns.

The dimensions of the BAV23-7 are 3 mm in length, 3 mm in height, and 1.4 mm in width.

This diode is suitable for various electronic switching and signal conditioning applications.

No, the BAV23-7 diode is not automotive certified but is designed for general electronic applications.

The BAV23-7 diode is configured as an isolated silicon junction diode.

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