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Taiwan Semiconductor N-Channel MOSFET 55 A, 30 V Enhancement Mode, 4-Pin TO-252 Package TSM090N03CP ROG
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TSM090N03CP ROG |
| Width | 5.8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | IEC 61249 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 7.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports enhancement mode channel operation for efficient switching.
- Maximum power dissipation rating of 40 W allows reliable performance under load.
- Low Rds(on) of 13 mΩ improves conduction efficiency.
- Operates in temperature range from -55°C to 150°C ensuring durability.
- Typical gate charge of 7.5 nC at Vgs enhances fast switching response.
- Designed with IEC 61249 automotive standard compliance.
- Compact dimensions of 6.5 mm length, 5.8 mm width and 2.3 mm height.
- Forward voltage drop approximately 1 V supports efficient power management.
Product Description
Taiwan Semiconductor TSM090N03CP ROG N-Channel MOSFET offers robust performance with a continuous drain current of 55 A and a maximum drain-source voltage of 30 V. Packaged in a 4-pin TO-252 surface mount format, this enhancement mode transistor suits advanced power switching applications.
Designed to dissipate up to 40 W of power, this MOSFET enables reliable operation in industrial, automotive, and consumer electronics systems. The device exhibits a low drain-source resistance of 13 mΩ, reducing power losses in circuits. Its gate threshold voltage varies between 1 V and 2.5 V, providing efficient switching characteristics.
Operating temperature ranges from -55°C to 150°C, ensuring suitability for harsh environmental conditions. Typical gate charge is low at 7.5 nC, enhancing switching speed and energy efficiency.
The MOSFET is compliant with IEC 61249 automotive standards, making it ideal for automotive electronics and other demanding systems where high reliability is essential.
The compact TO-252 packaging with 6.5 mm length, 5.8 mm width, and 2.3 mm height supports space-saving PCB layouts. The surface mount mount type simplifies assembly in automated manufacturing.
Enhancement mode N-channel MOSFET with 55 A continuous drain current. Maximum 30 V drain-source voltage rating. Low 13 mΩ Rds(on) resistance. Maximum power dissipation 40 W for robust performance. Operating temperature range from -55°C to 150°C.
Typical gate charge of 7.5 nC at 20 V gate-source voltage. Complies with IEC 61249 automotive standard. Compact 4-pin TO-252 surface mount package.
This MOSFET is suitable for industrial, automotive, electronic circuit power switching, and general-purpose amplification use cases. It supports designs requiring high efficiency, thermal stability, and compliance with automotive quality standards.
Explore more high-performance discrete semiconductors and MOSFET devices in the Electronics & Electricals category to power your applications with enhanced reliability and efficiency.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The drain-source resistance (Rds(on)) is 13 mΩ, which improves conduction efficiency.
The typical gate charge at a gate-source voltage of 20 V is 7.5 nC.
It operates within a temperature range of -55°C to 150°C.
This model is packaged in a 4-pin TO-252 surface mount format.
The maximum power dissipation rating for this MOSFET is 40 W.
Yes, it is designed to comply with the IEC 61249 automotive standard.
The dimensions are 6.5 mm in length, 5.8 mm in width, and 2.3 mm in height.
The forward voltage drop is approximately 1 V, supporting efficient power management.
This device uses an N-channel enhancement mode for efficient switching.
It is suitable for industrial, automotive, electronic circuit power switching, and general-purpose amplification applications.
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