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Microchip Type P-Channel MOSFET 140 A 30 V Enhancement Mode 3-Pin TO-92 VP0106N3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | VP0106N3-G |
| Mount Type | Through Hole |
| Series | VP0106 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- The device utilizes a vertical DMOS structure with silicon-gate manufacturing ensuring high input impedance and excellent thermal stability.
- It features a low threshold voltage, fast switching speeds, and low input capacitance suitable for switching and amplifying applications.
- The MOSFET operates at a maximum power dissipation of 1.6 W and can withstand temperatures from -55°C to 150°C.
- Features integral source-drain diode and a maximum gate-source voltage of 20 V for robust control.
- Package type TO-92 enables through-hole mounting for easy PCB integration.
- Ideal for industrial, power management, and switching use cases requiring reliable P-Channel MOSFETs.
Product Description
Microchip VP0106N3-G is a high-performance Type P-Channel MOSFET designed to provide a maximum continuous drain current of 140 A and a maximum drain-source voltage of 30 V. This device employs a vertical DMOS structure with enhancement mode operation, fabricated on silicon-gate technology to ensure high input impedance and positive temperature coefficient. Encapsulated in a 3-Pin TO-92 package for through-hole mounting, it suits various industrial and electronic applications.
The device offers excellent thermal stability, preventing thermal runaway and secondary breakdown, making it highly reliable for power switching and amplifying tasks. It features a maximum power dissipation rating of 1.6 W and can operate over a wide temperature range from -55°C to 150°C, enabling use in demanding environments.
Key electrical characteristics include a maximum drain-source resistance of 8 mΩ, forward voltage of 1.8 V, and a maximum gate-source voltage of 20 V. The integral source-drain diode enhances switching performance by reducing parasitic effects.
This MOSFET is ideal for power management in industrial, telecommunications, and consumer electronics. Its low drive power requirement and ease of paralleling enable scalable designs and efficient power conversion.
The device utilizes a vertical DMOS structure with low threshold voltage and high input impedance. High continuous current capability of 140 A suitable for power applications. Robust 3-Pin TO-92 package for easy through-hole installation.
Wide operating temperature range from -55°C to 150°C for harsh conditions. Maximum drain-source resistance of 8 mΩ ensuring low conduction losses. Integral source-drain diode enhances switching performance.
Microchip provides this MOSFET with proven manufacturing quality for reliable performance in switching, amplifying, and power regulation in laboratory, industrial, and commercial electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for the Microchip VP0106N3-G is 140 A.
This model has a maximum drain-source voltage of 30 V.
The VP0106N3-G is encapsulated in a TO-92 package type, which allows for through-hole mounting.
It operates over a wide temperature range from -55°C to 150°C.
The maximum power dissipation rating for this MOSFET is 1.6 W.
This model is a Type P-Channel MOSFET.
The maximum gate-source voltage for this model is 20 V.
The forward voltage of the Microchip VP0106N3-G is 1.8 V.
The maximum drain-source resistance for this MOSFET is 8 mΩ.
This MOSFET is suitable for power management, switching, and amplifying applications in industrial and consumer electronics.
The TO-92 package of this model has 3 pins.
It utilizes a vertical DMOS structure with silicon-gate manufacturing to ensure high input impedance and thermal stability.
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