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onsemi Transistor PNP Bipolar Small Signal 200 mA, 40 V, 3-Pin TO-92 2N3906BU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.71mm
Length 5.2mm
Model 2N3906BU
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
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RS Stock No. 739-0375Brand: onsemiManufacturers Part No.: 2N3906BU
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 250MHz
Maximum DC Collector Current 200 mA

Key Features

  • This transistor is suitable for both linear and switching applications.
  • It has a maximum collector current of 200 mA.
  • The device supports a maximum collector-emitter voltage of 40 V.
  • Featuring a maximum transition frequency of 250 MHz, ideal for high-frequency operation.
  • It is supplied in a through-hole mounting TO-92 package with 3 pins.
  • The minimum DC current gain (hFE) is 30 ensuring reliable amplification.
  • Supports a wide operating temperature range from -55°C to 150°C.
  • The maximum power dissipation is 625 mW for medium power applications.

Product Description

onsemi 2N3906BU is a small signal PNP bipolar transistor designed for linear and switching applications in electronic circuits. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V, suitable for medium power applications.

The transistor comes in a 3-pin TO-92 through-hole package providing easy mounting on printed circuit boards. Its small form factor with dimensions approximately 5.2 mm length, 4.19 mm width, and 0.71 mm height make it ideal for compact designs.

With a high cut-off frequency of 250 MHz and a minimum DC current gain of 30, the 2N3906BU performs efficiently in a broad range of switching and amplification circuits. It can operate reliably across a wide temperature range from -55°C to 150°C ensuring stability in harsh environments.

This transistor is a reliable choice for industrial, commercial, and educational electronic circuit designs, including signal amplification, switching, and general-purpose applications.

This transistor is suitable for both linear and switching applications. It has a maximum collector current of 200 mA. The device supports a maximum collector-emitter voltage of 40 V. Featuring a maximum transition frequency of 250 MHz, ideal for high-frequency operation.

It is supplied in a through-hole mounting TO-92 package with 3 pins. The minimum DC current gain (hFE) is 30 ensuring reliable amplification. Supports a wide operating temperature range from -55°C to 150°C. The maximum power dissipation is 625 mW for medium power applications.

Transistor polarity is PNP making it compatible with various circuits requiring PNP configuration. This component is primarily used in industrial electronic applications such as amplification and switching. Choose onsemi 2N3906BU for your discrete semiconductor requirements in electronics design, available in pack quantities suitable for production or prototyping.

Explore more products in our Bipolar Transistors category.

onsemi Transistor PNP Bipolar Small Signal 200 mA, 40 V, 3-Pin TO-92 2N3906BU
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Frequently Asked Questions

The maximum collector current for the 2N3906BU transistor is 200 mA.

The 2N3906BU supports a maximum collector-emitter voltage of 40 V.

This model features a maximum transition frequency of 250 MHz, making it suitable for high-frequency applications.

The 2N3906BU operates reliably across a temperature range from -55°C to 150°C.

It is supplied in a 3-pin TO-92 through-hole package, which allows for easy mounting on printed circuit boards.

The minimum DC current gain (hFE) for this transistor is 30, ensuring reliable amplification.

The maximum power dissipation for this model is 625 mW, suitable for medium power applications.

The height of the 2N3906BU is approximately 0.71 mm.

This model has dimensions of approximately 5.2 mm in length, 4.19 mm in width, and 0.71 mm in height.

The transistor polarity is PNP, making it compatible with various circuits requiring PNP configuration.

This transistor is suitable for both linear and switching applications, including signal amplification and general-purpose electronic circuit designs.

The maximum emitter-base voltage (VEBO) for this model is -5 V.

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