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Vishay N-Channel Power MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiR588DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiR588DP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 59.5A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.008Ω |
| Maximum Power Dissipation Pd | 59.5W |
| Typical Gate Charge Qg @ Vgs | 14.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Very low on-resistance minimizes conduction losses and reduces heat generation.
- High continuous drain current supports heavy-load switching applications.
- 80 V drain-source rating enables medium-voltage power designs.
- Moderate gate charge allows efficient and fast switching.
- PowerPAK SO-8 package provides excellent thermal dissipation on densely populated boards.
- Operates over a temperature range of -55 °C to 150 °C ensuring reliability in harsh environments.
- Maximum gate-source voltage of 20 V protects gate circuitry from overstress.
- Typical gate charge of 14.2 nC enhances switching performance with low energy loss.
Product Description
Vishay SiR588DP-T1-RE3 is an N-Channel Power MOSFET designed specifically for high-current switching in surface-mount power electronics. This device supports a maximum continuous drain current of 59.5 A and withstands drain-source voltages up to 80 V, making it suitable for medium-voltage power conversion applications. Packaged in an 8-pin PowerPAK SO-8 format, it offers a compact footprint combined with superior thermal performance, ideal for dense PCB layouts.
The MOSFET features very low on-resistance of 0.008 Ω, which reduces conduction losses and heat generation, thus improving efficiency. It supports a wide operating temperature range from -55 °C to 150 °C, ensuring robust operation even in demanding thermal environments. The typical gate charge at 14.2 nC allows for efficient switching control and fast response times, crucial for modern power management circuits.
This device's maximum gate-source voltage is 20 V; gate driver circuits should limit voltage below this threshold to avoid gate overstress. Its power dissipation capability reaches 59.5 W, which improves thermal margins and reliability in continuous operation scenarios. Forward voltage drop is specified at 1.1 V, contributing further to efficient conduction.
Applications include DC-DC converters for power management, motor-drive inverter stages, power supplies used in server and telecom equipment, as well as battery management and charging systems. The robust design supports industrial, commercial, and automotive power electronic systems requiring reliable medium-voltage, high-current N-Channel MOSFETs.
Very low on-resistance reduces conduction losses and heat generation. High continuous drain current supports heavy-load switching. 80 V drain-source rating enables medium-voltage designs. Moderate gate charge allows efficient and rapid switching.
PowerPAK SO-8 package offers improved thermal management. Wide operating temperature range from -55 °C to 150 °C. Maximum gate-source voltage limited to 20 V for gate protection. Typical gate charge of 14.2 nC for optimized switching energy.
Applications include DC-DC converters, motor drives, telecom power supplies, and battery charging. Explore more Vishay MOSFETs and power electronics devices at EnvMart for enhanced industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 59.5 A.
This MOSFET has a maximum drain-source voltage rating of 80 V.
The maximum drain-source resistance is 0.008 Ω, which minimizes conduction losses.
The typical gate charge is 14.2 nC, allowing for efficient switching performance.
It operates over a temperature range of -55 °C to 150 °C, ensuring reliability in harsh environments.
The SiR588DP-T1-RE3 is packaged in an 8-pin PowerPAK SO-8 format.
The maximum gate-source voltage is 20 V, which protects the gate circuitry from overstress.
The forward voltage drop is specified at 1.1 V, contributing to efficient conduction.
It is suitable for applications such as DC-DC converters, motor-drive inverters, and power supplies in telecom equipment.
The maximum power dissipation capability is 59.5 W, which improves thermal margins in continuous operation.
The dimensions are 6.15 mm in length and 5.15 mm in width.
This model complies with RoHS standards.
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