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onsemi SuperFET II N-Channel MOSFET, 20.6 A, 600 V Enhancement Mode, 3-Pin TO-220 Package FCP190N60E
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FCP190N60E |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | SuperFET II |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20.6A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.19Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This device features SuperFET II technology for advanced charge balance and high efficiency.
- It has a maximum continuous drain current of 20.6 A and a maximum drain-source voltage of 600 V.
- TO-220 package ensures reliable through-hole mounting and easy heat dissipation.
- The device delivers a low maximum drain source resistance of 0.19 ohms to minimize power losses.
- Operating temperature range extends from -55°C to 150°C for robust industrial performance.
- Typical gate charge of 63 nC at Vgs=6 V enables fast switching for power conversion.
- Designed to support applications such as servers, telecom, SMPS, UPS, solar inverters, and lighting systems.
- Manufactured in China with Super Junction Technology to improve reliability and efficiency.
Product Description
onsemi FCP190N60E SuperFET II N-Channel MOSFET is a high voltage, high current enhancement mode transistor housed in a 3-pin TO-220 package providing efficient power switching for demanding industrial and commercial applications.
Featuring SuperFET II technology, this MOSFET integrates advanced charge balance techniques to reduce losses and improve device ruggedness, enhancing system reliability especially in AC-DC switch mode power supplies (SMPS), telecom equipment, servers, computing, industrial power supplies, uninterruptible power supplies (UPS/ESS), solar inverters, and lighting applications.
The device supports a maximum continuous drain current of 20.6 A and a drain-source voltage rating of 600 V, making it suitable for medium to high power applications requiring efficient switching with minimal conduction losses. The maximum drain source resistance of 0.19 Ω contributes to energy efficiency and reduced thermal dissipation.
It operates within an extended temperature range from -55°C minimum to 150°C maximum, ensuring stable performance under harsh environmental conditions common in industrial and commercial settings. The typical gate charge of 63 nC facilitates fast switching speeds, improving overall system efficiency.
Utilizes advanced Super Junction Technology for superior efficiency and robustness. 3-pin TO-220 package supports through-hole mounting and efficient heat dissipation. Wide operating temperature range suitable for industrial and commercial applications.
Low gate charge enables fast switching and low switching losses. Ideal for use in SMPS, UPS, telecom, solar inverters, and lighting controls. Manufactured in China with compliance to applicable manufacturing standards.
Overall, the onsemi FCP190N60E is engineered to deliver reliable switching performance with enhanced efficiency for power management systems requiring high power density and reliability.
Explore the wide range of power semiconductor components and discrete MOSFETs at EnvMart to find solutions tailored for your electronic and industrial power design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20.6 A.
It has a maximum drain-source voltage rating of 600 V.
The operating temperature range extends from -55°C to 150°C.
This model is housed in a 3-pin TO-220 package.
The maximum drain source resistance is 0.19 ohms.
The typical gate charge at Vgs=6 V is 63 nC.
The maximum power dissipation is rated at 208 W.
The dimensions of the TO-220 package are 9.4 mm in height, 10.67 mm in length, and 4.83 mm in width.
The maximum gate source voltage is -30 V to +30 V.
This device features an N-channel configuration.
It supports through-hole mounting.
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