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Infineon Dual Type P, Type N-Channel MOSFET 4.7 A 55 V Depletion 8-Pin SO-8 IRF7343TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7343TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | IRF7343PbF |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.96V |
| Transistor Configuration | Dual |
Key Features
- This MOSFET features dual transistor configuration with one P-channel and one N-channel device.
- It has a maximum drain-source resistance of 170mΩ ensuring efficient performance.
- Designed for surface mount applications with an SO-8 package and 8 pins.
- Capable of operating in depletion mode with fast switching characteristics.
- Operates reliably over a wide temperature range from -55°C to 150°C.
- Maximum power dissipation capacity is 2W for stable thermal handling.
- Typical gate charge at 24nC supports effective gate drive control.
- Maximum gate-source voltage tolerance is 20V for robust electrical performance.
Product Description
Infineon IRF7343TRPBF is a dual N- and P-channel HEXFET power MOSFET designed for efficient switching and power management in electronic circuits. This dual MOSFET comprises one Type P and one Type N transistor configured in a compact SO-8 surface-mount package with 8 pins, suitable for space-constrained PCB designs.
It supports a maximum continuous drain current of 4.7 A and a drain-source voltage rating of 55 V, making it suitable for moderate power applications. The device operates in depletion mode, offering low drain-source resistance of 170mΩ to ensure minimal conduction losses and improved efficiency.
Its typical forward voltage drop is 0.96 V, and a typical gate charge of 24nC allows fast gate switching and effective control for high-speed applications. The device can tolerate up to 20 V gate-source voltage and has a maximum power dissipation of 2W, ensuring robustness in various operating conditions.
With operational temperatures ranging from -55°C to 150°C, the IRF7343TRPBF is suited for industrial, automotive, and consumer electronics uses. This MOSFET features dual transistor configuration with one P-channel and one N-channel device.
Maximum continuous drain current rated at 4.7 A for reliable current handling. Drain-source voltage rating of 55 V enables handling medium voltage applications. Surface-mount SO-8 package with 8 pins supports compact PCB implementations.
Low Rds(on) improves efficiency and reduces thermal losses. Wide operating temperature range from -55°C to 150°C supports harsh environments. Maximum power dissipation rating of 2W ensures stable performance under load. Typical gate charge and forward voltage specs enable fast switching and minimal voltage drop.
Compact dimensions 5mm x 4mm x 1.5mm make it suitable for dense circuit layouts.
This Infineon MOSFET is ideal for industrial electronics, power management circuits, consumer electronics, and automotive applications where efficient switching and dual transistor capability are required.
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Frequently Asked Questions
The maximum continuous drain current for the IRF7343TRPBF is 4.7 A.
It has a drain-source voltage rating of 55 V, suitable for medium voltage applications.
The maximum power dissipation capacity is 2 W, ensuring stable thermal handling under load.
The dimensions of the SO-8 package are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge at Vgs is 24 nC, supporting effective gate drive control.
The maximum gate-source voltage tolerance is 20 V, providing robust electrical performance.
The maximum drain-source resistance is 170 mΩ, ensuring efficient performance with minimal conduction losses.
It can operate reliably over a wide temperature range from -55°C to 150°C.
This model features a dual transistor configuration with one P-channel and one N-channel device.
The typical forward voltage drop is 0.96 V, which contributes to its efficiency.
This MOSFET is designed for surface mount applications with an SO-8 package.
It is suitable for industrial electronics, power management circuits, consumer electronics, and automotive applications.
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