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onsemi N-Channel Enhancement Mode MOSFET 12A 60V TO-220 Package MTP3055VL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | MTP3055VL |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MTP3055VL |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 7.8nC |
| Maximum Gate Source Voltage Vgs | -15, +15V |
| Forward Voltage Vf | 1.3V |
Key Features
- Enhancement mode operation ensures reliable switching performance.
- Designed with a low on-resistance of 180 milliohms for efficient power dissipation.
- Supports a maximum power dissipation of 48 watts for demanding applications.
- Wide operating temperature range from -65°C to 175°C suitable for industrial environments.
- Typical gate charge of 7.8 nanocoulombs allows fast switching speeds.
- Maximum gate-source voltage ranges from -15V to +15V for robust gate drive control.
- Forward voltage drop of 1.3 volts ensures minimal conduction losses.
- Compact dimensions with a height of 16.51 mm, length of 10.67 mm, and width of 4.83 mm.
Product Description
onsemi MTP3055VL is a high-performance N-Channel Enhancement Mode MOSFET designed to deliver efficient power switching in various electronic applications. Featuring a maximum continuous drain current of 12 amperes and drain-source voltage rating of 60 volts, this transistor supports reliable operation in power management and control circuits.
The device comes in a 3-pin TO-220 package allowing easy through-hole mounting on printed circuit boards. Utilizing proprietary DMOS technology, the MTP3055VL achieves low on-state resistance of 180 milliohms, enhancing overall device efficiency by reducing conduction losses.
With maximum power dissipation capability of 48 watts and a wide operating temperature range from -65°C to 175°C, it is suitable for industrial, automotive (non-automotive standard), laboratory, and commercial electronic applications requiring rugged and reliable performance.
The MOSFET features a typical gate charge of 7.8nC at specified gate-source voltage, facilitating fast and efficient switching operations. Gate control voltage is supported between -15V and +15V, offering flexibility in drive circuits.
Additional device characteristics include a forward voltage drop of 1.3 volts and compact form factor measuring approximately 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width to fit space-constrained designs.
Enhancement mode N-Channel MOSFET technology for precise switching control. Low on-resistance of 180 milliohms to minimize power losses. High power dissipation rating allows usage in demanding electrical circuits. Wide temperature tolerance supports harsh industrial conditions.
Compact TO-220 package suitable for through-hole mounting. Fast switching with low typical gate charge. Robust gate voltage tolerance. Compact physical dimensions aid versatile layout integration.
This product is ideal for use in industrial electronics, power supply systems, switching regulators, motor control, automotive, and other embedded systems where efficient MOSFET switching is critical. onsemi’s extensive portfolio includes this device to help engineers meet design challenges with high reliability and performance.
Explore more MOSFETs and related semiconductor components on EnvMart’s dedicated Electronics & Electricals category.
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Frequently Asked Questions
The maximum continuous drain current for the MTP3055VL is 12 amperes.
This model has a maximum drain-source voltage rating of 60 volts.
It supports a maximum power dissipation of 48 watts, suitable for demanding applications.
The on-resistance is 180 milliohms, which helps to minimize power losses during operation.
The MTP3055VL operates within a wide temperature range from -65°C to 175°C.
This MOSFET comes in a TO-220 package, designed for through-hole mounting on printed circuit boards.
The typical gate charge at specified gate-source voltage is 7.8 nanocoulombs.
The forward voltage drop is 1.3 volts, which contributes to minimal conduction losses.
This model features a 3-pin configuration.
The maximum gate-source voltage ranges from -15V to +15V, allowing robust gate drive control.
This MOSFET is ideal for use in power management, switching regulators, motor control, and various embedded systems.
The country of origin for this product is India.
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