$10.17
$9.87
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics Single N-Channel RF MOSFET, 2.5 A, 40 V, Enhancement Mode, 14-Pin PowerFLAT PD55003L-E
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 0.88mm |
| Length | 5mm |
| Model | PD55003L-E |
| Width | 5mm |
| Mount Type | Surface |
| Operating Frequency | 500MHz |
| Series | PD55003L-E |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -65°C |
| Pin Count | 14 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 40V |
| Channel Mode | Enhancement |
| Transistor Configuration | Single |
Key Features
- Operates with a maximum continuous drain current of 2.5 A.
- Maximum drain-source voltage rating of 40 V for robust performance.
- Features a surface mounted 14-pin PowerFLAT package for easy integration.
- Enhancement mode transistor offering reliable switching characteristics.
- Operates within a temperature range from -65°C to +150°C.
- Typical power gain of 19 dB suitable for L-band satellite uplinks.
- Suitable for industrial and commercial RF power amplification applications.
- Single transistor configuration optimized for efficient RF amplification.
Product Description
STMicroelectronics PD55003L-E is a single N-Channel RF MOSFET transistor designed for RF amplification applications up to 500 MHz operating frequency. This device features a maximum continuous drain current of 2.5 A and a maximum drain-source voltage rating of 40 V, conforming to enhancement mode transistor operation. It is housed in a compact 14-pin PowerFLAT package with surface mount technology, measuring 5 mm in length, 5 mm in width, and 0.88 mm in height.
With an operating temperature range from -65°C to +150°C, the PD55003L-E reliably performs in industrial and commercial RF circuits, including L-band satellite uplinks and communications equipment. The typical power gain of 19 dB ensures effective amplification within the frequency range of 1 MHz to 2 GHz, making it suitable for high-frequency power amplification tasks.
The single transistor configuration supports efficient RF power output while maintaining low distortion. This MOSFET does not hold automotive-specific approvals but meets required semiconductor standards for general industrial use. Its surface mounted PowerFLAT package facilitates compact PCB designs and improved thermal management.
Operates at maximum drain current of 2.5 A. Maximum drain-source voltage rating of 40 V. Compact 14-pin PowerFLAT surface mount package. Enhancement mode N-channel transistor. Operational temperature range suitable for demanding environments.
Typical power gain of 19 dB at L-band frequencies. Single transistor configuration for RF applications. Compatible with industrial and communication devices requiring RF power MOSFETs. Dimensions 5mm x 5mm x 0.88mm for space-efficient layouts.
No automotive standard certification.
This RF MOSFET is ideal for industrial, communications, and laboratory applications requiring reliable RF amplification up to 500 MHz. It supports designs in satellite uplink equipment and other high-frequency power amplification use cases. Explore more semiconductor and MOSFET products at EnvMart for your advanced industrial and electronics needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It operates at an operating frequency of up to 500 MHz.
The typical power gain is 19 dB, suitable for L-band satellite uplinks.
The dimensions of the PowerFLAT package are 5 mm in length, 5 mm in width, and 0.88 mm in height.
It operates within a temperature range from -65°C to +150°C.
It features a single transistor configuration optimized for RF amplification.
The MOSFET has a pin count of 14.
It supports surface mounting technology.
This model does not hold automotive-specific approvals but meets semiconductor standards for general industrial use.
It is suitable for industrial and commercial RF power amplification applications, including L-band satellite uplinks.
The country of origin for this MOSFET is India.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$0.69
$0.67
-3%
New
$0.57
$0.55
-3%
New
$1.44
$1.40
-3%
New
$1.89
$1.83
-3%
New
Recently Viewed Products
$36.26
$35.17
-3%
New
$509.88
$494.58
-3%
New
$10.17
$9.87
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent