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onsemi N-Channel MOSFET 14 A 50 V Enhancement 3-Pin TO-252 RFD14N05SM9A

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onsemi N-Channel MOSFET 14 A 50 V Enhancement 3-Pin TO-252 RFD14N05SM9A

Name: onsemi N-Channel MOSFET 14 A 50 V Enhancement 3-Pin TO-252 RFD14N05SM9A
Brand: onsemi
SKU: 227875
Price: 0.68 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.39mm
Length	6.73mm
Model	RFD14N05SM9A
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	14A
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	100mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	48W
Typical Gate Charge Qg @ Vgs	40nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Supports a maximum continuous drain current of 14 A.
Maximum drain-source voltage rating is 50 V.
Features an enhancement mode channel and surface mount package type TO-252.
Offers a low maximum drain-source resistance of 100 mΩ for efficiency.
Capable of dissipating up to 48 W of power.
Operates within a temperature range from -55°C to 175°C.
Has a typical gate charge of 40 nC at Vgs.
Maximum gate-source voltage ranges from -20 V to +20 V.

Product Description

onsemi RFD14N05SM9A N-Channel MOSFET is a high-performance enhancement mode transistor designed using proprietary DMOS technology to minimize on-state resistance and provide rugged, reliable switching performance. It supports a continuous drain current of 14 A and withstands a maximum drain-source voltage of 50 V, making it suitable for power switching applications.

This device comes in a compact TO-252 surface mount package, facilitating easy integration into printed circuit boards. Its low maximum drain-source resistance of 100 mΩ ensures efficient operation by reducing power losses. The transistor can dissipate power up to 48 W and operate safely in a broad temperature range from -55°C to 175°C.

The typical gate charge of 40 nC at Vgs allows for fast switching, improving overall circuit responsiveness. It tolerates gate-source voltages from -20 V to +20 V without damage. Its physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height provide a compact form factor ideally suited for modern semiconductor designs.

This MOSFET is ideal for industrial, electronic, and power management applications including power supplies, motor drives, and switching regulators. Its durable construction, high current capacity, and efficient switching make it a reliable choice in power electronic circuits.

Supports a maximum continuous drain current of 14 A. Maximum drain-source voltage is 50 V. Utilizes enhancement mode N-channel technology. Low on-resistance of 100 mΩ reduces power loss. Power dissipation rating of 48 W ensures high efficiency.

Wide temperature operating range from -55°C to +175°C. Typical gate charge of 40 nC enables fast switching. Maximum gate-source voltage rating of ±20 V. Surface mount TO-252 package for easy PCB integration. Compact size suitable for diverse electronic applications.

This product is part of the onsemi MOSFET portfolio, trusted in industrial, laboratory, telecommunications, automotive, and manufacturing sectors for power switching applications. Explore other MOSFET and semiconductor components on EnvMart for enhanced solutions.