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onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.7 A, 20 V Enhancement 6-Pin SOT-23 FDC6327C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6327C |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 3.25nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 0.76V |
| Transistor Configuration | Isolated |
Key Features
- Offers a low on-resistance of 270mΩ for reduced power loss.
- Features an enhancement mode channel supporting both P and N types.
- Packaged in a compact 6-pin SOT-23 surface mount device.
- Supports a maximum power dissipation of 960mW suitable for low power applications.
- Operates reliably across a wide temperature range from -55°C to +150°C.
- Typical gate charge of 3.25nC ensures swift switching performance.
- Maximum gate-source voltage tolerance of ±8 V enhances robustness.
- Designed with an isolated transistor configuration for flexible circuit integration.
Product Description
onsemi FDC6327C Isolated PowerTrench 2 Type P, Type N-Channel MOSFET is a dual-channel transistor designed to optimize system efficiency and power density in electronic circuits. Rated for a continuous drain current of 2.7 A and a drain-source voltage of 20 V, this device is packaged in a small 6-pin SOT-23 surface mount enclosure, making it ideal for space-constrained applications.
The PowerTrench technology incorporated in this MOSFET offers low gate charge and low reverse recovery charge, resulting in fast switching speeds and improved thermal performance. Its shielded-gate structure ensures minimized figure of merit (FOM) values, which translates to better overall efficiency compared to previous generations.
This enhancement mode MOSFET supports both Type P and Type N channels, making it versatile for a wide range of power management tasks, including synchronous rectification in AC/DC power supplies. The device supports a maximum power dissipation of 960mW and can operate safely in extreme thermal environments from -55°C up to 150°C.
The isolated transistor configuration and soft body diode characteristics reduce the necessity for additional snubber circuitry, thereby simplifying power designs. With a compact footprint of 3mm length, 1.7mm width, and 1mm height, it is suitable for dense PCB layouts and modern industrial electronic equipment.
Low on-resistance of 270mΩ minimizes conduction losses. Typical gate charge of 3.25nC enables efficient switching. Maximum gate-source voltage range supports ±8 V for device reliability. Dual element chip design enhances circuit flexibility.
Surface mount package supports automated assembly.
Applications include industrial power management, consumer electronics, embedded systems, and other commercial electronic equipment requiring reliable MOSFET performance. Its advanced PowerTrench construction makes it favorable for designers aiming to optimize power efficiency and thermal handling.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.7 A.
It supports a maximum drain-source voltage of 20 V.
The typical gate charge is 3.25 nC.
The on-resistance is 270 mΩ, which helps reduce power loss.
It operates reliably across a wide temperature range from -55°C to +150°C.
This model is packaged in a compact 6-pin SOT-23 surface mount package.
The maximum power dissipation is 960 mW.
The dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.
It supports both Type P and Type N channels, making it versatile for various applications.
The maximum gate-source voltage tolerance is ±8 V.
It features an isolated transistor configuration, which enhances circuit integration flexibility.
This MOSFET is suitable for applications in industrial power management, consumer electronics, and embedded systems.
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