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onsemi Isolated PowerTrench 2 N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6305N |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 128mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 0.77V |
| Transistor Configuration | Isolated |
Key Features
- Features low gate charge for efficient switching performance.
- Utilizes PowerTrench® technology to minimize on-state resistance.
- Designed for fast switching speed with a super small footprint.
- Typical applications include load switching, DC/DC converters, and motor driving.
- Operates reliably within a temperature range of -55°C to 150°C.
- Includes an isolated transistor configuration with 2 elements per chip.
- Maximum power dissipation of 960 mW supports efficient heat handling.
- Maximum gate source voltage is ±8 V, ensuring gate protection.
Product Description
onsemi FDC6305N is an Isolated PowerTrench 2 N-Channel MOSFET designed with PowerTrench® technology to provide low on-state resistance and low gate charge, facilitating superior switching performance.
This MOSFET supports a maximum continuous drain current of 2.7 A and a maximum drain-source voltage of 20 V, making it suitable for efficient power management.
The device is housed in a compact 6-pin SOT-23 package with dimensions of 3 mm length, 1.7 mm width, and 1 mm height, enabling a small footprint 72% smaller than a standard SO08 package.
Key features include an isolated transistor configuration with two elements per chip, enhancement channel mode, a typical gate charge of 3.5 nC, and maximum power dissipation rating of 960 mW. It operates safely within a wide temperature range from -55°C to 150°C.
The FDC6305N MOSFET is commonly used in industrial, electronic, and automotive applications such as load switching, DC/DC converters, and motor drivers. Low gate charge for fast and efficient switching. PowerTrench® technology reduces on-state resistance.
Compact 6-pin SOT-23 surface mount package. Wide operating temperature range and high maximum power dissipation. Isolated transistor configuration for improved device performance. Suitable for DC/DC conversion and motor driving applications.
Soft body diode to support synchronous rectification in power supplies. Enhancement mode channel type for reliable switching operation. Maximum gate-source voltage rating ±8 V protects the device gate.
This product is a new and reliable MOSFET device made in India, suitable for semiconductor and electronics component applications, providing enhanced performance in power management systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.7 A.
It supports a maximum drain-source voltage of 20 V.
The typical gate charge is 3.5 nC at Vgs.
The dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.
The maximum power dissipation rating is 960 mW.
It operates reliably within a temperature range of -55°C to 150°C.
It features an isolated transistor configuration with 2 elements per chip.
The maximum gate-source voltage rating is ±8 V.
It is commonly used in load switching, DC/DC converters, and motor driving applications.
The channel type is N-channel with enhancement mode.
The maximum drain-source resistance is 128 mΩ.
This product is manufactured in India.
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