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DiodesZetex N-Channel MOSFET 4.8 A 45 V Enhancement Mode 6-Pin TSOT DMN4060SVT-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 900μm |
| Length | 2.9mm |
| Model | DMN4060SVT-7 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.8A |
| Maximum Drain Source Voltage Vds | 45V |
| Maximum Drain Source Resistance Rds | 62mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 22.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High performance N-Channel MOSFET designed for surface mount applications.
- Maximum continuous drain current of 4.8 A suitable for low to medium power switching.
- Drain-source voltage rating up to 45 V for enhanced reliability.
- Low on-resistance of 62 milliohms reduces conduction losses.
- Typical gate charge of 22.4 nanocoulombs enables fast switching.
- Maximum power dissipation of 1.8 W ensures good thermal handling.
- Operates within temperature range from -55°C to 150°C for harsh environments.
- Compliant with automotive standard AEC-Q101 ensuring quality and durability.
Product Description
DiodesZetex DMN4060SVT-7 is a high quality N-Channel MOSFET transistor engineered for efficient switching performance in a compact 6-pin TSOT package. It supports a maximum continuous drain current of 4.8 A and a drain-source voltage of 45 V, making it ideal for various power management and electronic switching applications.
This device features low drain-source resistance of 62 milliohms, minimizing power losses and improving efficiency in circuits. Its enhancement mode channel operation and typical gate charge of 22.4 nC enable fast and reliable switching. The MOSFET can dissipate up to 1.8 watts of power, suited for medium power electronics designs.
The transistor operates reliably over a broad temperature range from -55°C to 150°C, complying with automotive standard AEC-Q101 for use in demanding automotive electronics environments.
The compact TSOT package measures 2.9 mm in length, 1.6 mm in width, and 900 micrometers in height, providing easy surface mount assembly and space-saving benefits on printed circuit boards.
High performance N-Channel MOSFET construction for efficient switching. Maximum continuous current of 4.8 A for robust operation. Drain-source voltage rating of 45 V ensures safe voltage handling. Low on-resistance reduces heat generation and power loss.
Small gate charge for fast switching times. Power dissipation up to 1.8 W supports moderate power loads. Wide operating temperature range supports industrial applications. Automotive grade AEC-Q101 compliant for quality assurance.
Compact 6-pin TSOT package fits dense PCB layouts.
This MOSFET suits industrial, automotive, power management, and electronic manufacturing applications requiring reliable, efficient, and compact transistor solutions. Explore more DiodesZetex semiconductor products in the EnvMart Electronics & Electricals catalog.
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Frequently Asked Questions
The DMN4060SVT-7 supports a maximum continuous drain current of 4.8 A.
This model has a drain-source voltage rating of 45 V, ensuring safe voltage handling in applications.
The typical gate charge for this MOSFET is 22.4 nanocoulombs, which facilitates fast switching.
It features a low on-resistance of 62 milliohms, which helps reduce conduction losses.
This model can dissipate up to 1.8 watts, making it suitable for moderate power electronics designs.
It operates reliably within a temperature range from -55°C to 150°C, accommodating harsh environments.
This MOSFET is compliant with the automotive standard AEC-Q101, ensuring quality and durability for automotive applications.
The compact TSOT package measures 2.9 mm in length, 1.6 mm in width, and 900 micrometers in height.
The DMN4060SVT-7 is packaged in a 6-pin TSOT configuration, designed for surface mount applications.
This model features an enhancement mode N-channel type, suitable for efficient switching performance.
The maximum gate-source voltage for the DMN4060SVT-7 is -20V to +20V.
This MOSFET is designed for surface mounting, allowing for easy assembly on printed circuit boards.
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