DiodesZetex N-Channel MOSFET 5 A, 60 V Enhancement Mode, 8-Pin SOIC Surface Mount DMN6066SSS-13

DiodesZetex DMN6066SSS-13 is a high-quality N-Channel MOSFET designed for electronic applications requiring reliable switching and moderate power handling. Featuring an enhancement mode channel, it delivers a maximum continuous drain current of 5 A and withstands drain-source voltages up to 60 V. The device is housed in a compact 8-pin SOIC package optimized for surface mounting on printed circuit boards.

This MOSFET exhibits a low maximum drain-source resistance of 97 milliohms, allowing for efficient conduction with minimal power losses. Its typical gate charge of 10.3 nC aids in fast switching speeds, beneficial in circuits demanding rapid response.

With a maximum power dissipation of 2.81 W, it is suitable for a wide range of power management and amplification tasks. The device operates reliably across a wide temperature range, from -55 °C to 150 °C, and meets the AEC-Q101 automotive standard, confirming its durability under harsh operating conditions.

The physical dimensions (5 mm length, 4 mm width, and 1.5 mm height) make this MOSFET a compact component for modern electronic assemblies. The maximum gate-source voltage specifications range between -20 V and +20 V, and the forward voltage is approximately 0.89 V. This product is an ideal choice for industrial, automotive, and consumer electronics applications.

Feature N-Channel MOSFET configuration with enhancement mode operation. Supports a continuous drain current of up to 5 A for moderate power applications. Maximum drain-source voltage rating is 60 V ensuring reliable switching.

Encapsulated in an 8-pin SOIC package suitable for surface mount technology. Low drain-source resistance of 97 milliohms to minimize conduction losses. Typical gate charge of 10.3 nanocoulombs for efficient switching performance.

Capable of dissipating up to 2.81 W of power under specified conditions. Wide operating temperature range from -55 °C to 150 °C for rugged environments. Built to automotive standard AEC-Q101 for robustness and reliability.

Compact physical dimensions: length 5 mm, width 4 mm, height 1.5 mm.

This MOSFET is widely used in industrial electronics, automotive electronics control systems, power management units, and manufacturing equipment. Its robust specifications ensure it meets the challenges of demanding environments such as HVAC controllers, agricultural machinery electronics, and commercial electronic devices.

Explore more DiodesZetex semiconductor components and MOSFETs on EnvMart for reliable and efficient electronic solutions.