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DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement Mode, 8-Pin SOIC ZXMC3A16DN8TA
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5mm |
| Model | ZXMC3A16DN8TA |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 6.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 17.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.85V |
| Transistor Configuration | Isolated |
Key Features
- Offers dual isolated N and P-Channel MOSFETs in a compact 8-pin SOIC package.
- Provides a maximum continuous drain current of 6.4 Amperes ensuring reliable power handling.
- Supports a maximum drain-source voltage of 30 Volts suitable for various power switching tasks.
- Features an enhancement mode channel with a maximum drain-source resistance of 50 milliohms for efficient conduction.
- Maximum power dissipation is 2.1 Watts allowing stable operation at elevated loads.
- Operates reliably in a temperature range from -55°C to +150°C, ensuring durability under harsh conditions.
- Typical gate charge is 17.5 nanocoulombs at gate-source voltage facilitating fast switching performance.
- Complies with RoHS, J-STD-020, UL 94V-0, AEC-Q101, and MIL-STD-202 standards for quality and safety assurance.
Product Description
DiodesZetex ZXMC3A16DN8TA is an isolated dual-channel power MOSFET comprising both Type P and Type N channels designed for use in enhancement mode circuits. This 8-pin SOIC package device is engineered to handle maximum continuous drain currents of 6.4 A and withstand drain-source voltages up to 30 V, making it ideal for electronic power switching applications in industrial, consumer electronics, and automotive environments.
The device's low maximum drain-source resistance (50 milliohms) combined with a typical gate charge of 17.5 nC at Vgs optimizes switching efficiency and thermal performance. It offers robust operation within a wide temperature range from -55°C to +150°C, suitable for demanding environments.
Constructed to meet stringent industry standards including RoHS compliance, J-STD-020, UL 94V-0 flammability rating, AEC-Q101 automotive qualifying standard, and MIL-STD-202, this MOSFET ensures reliability and safety for critical electronic applications.
The compact 8-pin SOIC surface mount package with dimensions of approximately 5 mm in length, 4 mm in width, and 1.5 mm in height supports automated PCB assembly and minimizes footprint on electronic boards.
This Power MOSFET is commonly applied in power management, motor control, switching regulators, and load driving applications across industrial, automotive, and commercial electronics sectors.
Offers dual isolated N and P-channel MOSFETs in a compact 8-pin SOIC configuration. Provides efficient switching with low on-resistance and typical gate charge of 17.5 nC. Supports operation from -55°C to +150°C for reliability across harsh environments.
Meets multiple international standards for compliance and safety assurance. Suitable for industrial, automotive, and consumer electronics power switching tasks. Discover more MOSFETs and semiconductor components at EnvMart to fulfill your electronic design and manufacturing needs with confidence.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.4 Amperes.
It can withstand a maximum drain-source voltage of 30 Volts.
The typical gate charge is 17.5 nanocoulombs at gate-source voltage.
The maximum power dissipation is 2.1 Watts, allowing stable operation at elevated loads.
It operates reliably within a temperature range from -55°C to +150°C.
The package dimensions are approximately 5 mm in length, 4 mm in width, and 1.5 mm in height.
This model uses surface mount technology for installation.
It complies with RoHS, J-STD-020, UL 94V-0, AEC-Q101, and MIL-STD-202 standards.
This MOSFET features both Type P and Type N channels in an isolated configuration.
The maximum drain-source resistance is 50 milliohms, which supports efficient conduction.
It is suitable for power management, motor control, switching regulators, and load driving applications across various sectors.
This model has 8 pins in its configuration.
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