onsemi N-Channel MOSFET 7.2 A 30 V Enhancement Mode Surface Mount 4-Pin SOT-223 NDT451AN

onsemi NDT451AN is an N-Channel Enhancement Mode MOSFET utilizing Fairchild Semiconductor's advanced DMOS technology, designed for efficient switching and rugged reliability in power applications.

This transistor is capable of sustaining a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 30 V, making it suitable for a range of electronic circuits where moderate power handling is needed. It features a low maximum drain-source resistance (Rds(on)) of 35 mΩ to minimize conduction losses and improve efficiency.

The device is housed in a compact 4-pin SOT-223 surface mount package, which measures 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height, enabling space-efficient PCB layouts. It supports a maximum power dissipation of 3 W, allowing it to handle respectable power levels in your designs.

NDT451AN is designed to operate reliably over a wide temperature range from -65°C to 150°C. The typical gate charge of 19 nC at specified gate voltage ensures responsive switching performance, essential for switching regulators and high-speed switching circuits.

The maximum gate-source voltage rating of ±20 V provides robustness against voltage spikes, and the transistor has a forward voltage drop (Vf) of 1.3 V typical, which reduces power loss during conduction.

This MOSFET is an ideal choice for industrial, electronic, power management, and automotive switching applications that demand durability, performance, and compact form factor. Its enhancement mode channel type ensures proper switching behavior for general-purpose MOSFET uses.

Utilizes Fairchild Semiconductor proprietary high cell density DMOS technology for low on-state resistance. Supports a maximum continuous drain current of 7.2 A and drain-source voltage of 30 V. Features 35 mΩ maximum drain-source resistance for efficient power dissipation.

Provides a maximum power dissipation rating of 3 W to handle moderate power applications. Operates in a temperature range from -65°C to 150°C for reliable performance. Compact dimensions: 6.7 mm length, 3.7 mm width, and 1.7 mm height for space-saving designs.

Typical gate charge of 19 nC at Vgs supports fast switching speeds. Designed for surface mount applications with a 4-pin SOT-223 package including enhancement mode channel. Typical forward voltage drop of 1.3 V ensures minimal conduction losses.

Maximum gate-source voltage rating is ±20 V for gate protection. Explore more industrial semiconductor components and electronic solutions on EnvMart to meet all your power management and discrete semiconductor needs.