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onsemi Isolated PowerTrench 2 N-Channel MOSFET 3.8 A 20 V Enhancement 6-Pin MicroFET FDME1024NZT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.5mm |
| Length | 1.6mm |
| Model | FDME1024NZT |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MicroFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.8A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 3nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features a PowerTrench series designed for efficient power switching.
- It supports surface mount technology with a 6-pin MicroFET package.
- The device has a maximum drain-source resistance of 160 mΩ.
- Enhancement mode channel operation provides reliable switching performance.
- Maximum power dissipation is 1.4 W, suitable for low power applications.
- Operational temperature ranges from -55°C to 150°C.
- Typical gate charge is low at 3 nC, optimizing switching speed.
- The transistor configuration is isolated, enhancing circuit design flexibility.
Product Description
onsemi FDME1024NZT Isolated PowerTrench 2 N-Channel MOSFET is a dual-element transistor designed for efficient power management in electronic circuits. This device provides a maximum continuous drain current of 3.8 A and a drain-source voltage rating of 20 V, making it ideal for low-voltage, high-efficiency applications.
Its 6-pin MicroFET surface mount package supports compact circuit designs, and the PowerTrench technology enhances power density and switching performance. The MOSFET operates in enhancement mode with a maximum drain-source resistance of 160 mΩ, ensuring low conduction losses.
Thermal performance is robust with a maximum power dissipation of 1.4 W and an operating temperature range from -55°C to 150°C. Low typical gate charge of 3 nC allows fast switching, contributing to efficient synchronous rectification in power supplies.
The device features isolated transistor configuration and contains two elements per chip, supporting advanced circuit applications in industrial, automotive, and electronic manufacturing fields.
This MOSFET features a PowerTrench series designed for efficient power switching. It supports surface mount technology with a 6-pin MicroFET package. The device has a maximum drain-source resistance of 160 mΩ. Enhancement mode channel operation provides reliable switching performance.
Maximum power dissipation is 1.4 W, suitable for low power applications. Operational temperature ranges from -55°C to 150°C. Typical gate charge is low at 3 nC, optimizing switching speed. The transistor configuration is isolated, enhancing circuit design flexibility.
Physical dimensions are compact: 1.6 mm length, 1.6 mm width, and 0.5 mm height. The MOSFET contains two elements per chip, increasing device functionality. This onsemi transistor is widely used in electronic components, semiconductor devices, discrete semiconductors, and power management circuits.
Explore more power semiconductor options and related MOSFET components on EnvMart for your industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.8 A.
It has a maximum drain-source voltage rating of 20 V.
The typical gate charge is 3 nC, which helps optimize switching speed.
The maximum power dissipation is 1.4 W, making it suitable for low power applications.
The dimensions are 1.6 mm in length, 1.6 mm in width, and 0.5 mm in height.
The operating temperature range is from -55°C to 150°C.
It uses a 6-pin MicroFET package, supporting surface mount technology.
The maximum drain-source resistance is 160 mΩ, ensuring low conduction losses.
This model features an isolated transistor configuration, enhancing circuit design flexibility.
It contains two elements per chip, increasing device functionality.
The channel type is N-channel, operating in enhancement mode.
The maximum gate-source voltage is -8 V to +8 V.
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