Infineon HEXFET Type P-Channel MOSFET 4.3 A 20 V Enhancement 3-Pin SOT-23 IRLML2244TRPBF

Infineon IRLML2244TRPBF HEXFET Type P-Channel MOSFET is a high-performance discrete semiconductor designed for robust and efficient switching in power management and electronic control applications. It supports a maximum continuous drain current of 4.3 A and a drain-source voltage of 20 V, making it suitable for medium-power circuits requiring low-voltage operation.

The device operates in enhancement mode and comes in a compact 3-pin SOT-23 surface mount package, facilitating space-efficient PCB layouts and mass manufacturing processes. Its low on-resistance (RDS(on)) of 95 milliohms significantly reduces conduction losses, improving circuit efficiency, particularly in switching applications.

With a maximum power dissipation of 1.3 W and an operating temperature range from -55°C to +150°C, the IRLML2244TRPBF offers stability and reliability in a variety of temperature environments including automotive and industrial settings. The typical gate charge of 6.9 nanocoulombs helps minimize switching losses and energy consumption.

This MOSFET includes protections with a maximum gate-source voltage of ±12 V and a forward voltage of -1.2 V, enhancing device durability in dynamic operating conditions. Its small form factor and surface mount design ensure compatibility with modern automated assembly.

Common industrial and commercial uses include low voltage switching tasks, power management in DC-DC converters, motor control systems critical in automation equipment, and power supply energy efficiency enhancements.

This MOSFET features enhancement mode operation ensuring high reliability in electronic circuits. The device has a low RDS(on) of 95mΩ optimized for minimal switching losses. Supports maximum power dissipation up to 1.3 watts for sustained performance.

Equipped for operating temperatures ranging from -55°C to +150°C for versatility in harsh environments. Compact SOT-23 surface mount package allows easy PCB integration and mass production efficiency. Typical gate charge of 6.9 nC reduces the switching energy consumption.

Maximum gate-source voltage tolerance of ±12 V protects device integrity during operation. Forward voltage of -1.2 V enhances the device’s switching efficiency in power management. Suitable for various applications including motor control, power supply circuits, and DC-DC converters in automation and electronics industries.

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